VNB10N07TR-E

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VNB10N07TR-E

IC PWR DRIVER N-CHAN 1:1 D2PAK

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Especificaciones

Series OMNIFET™, VIPower™
Part Status Active
Switch Type General Purpose
Number of Outputs 1
Ratio - Input:Output 1:1
Output Configuration Low Side
Output Type N-Channel
Interface On/Off
Voltage - Load 55V (Max)
Voltage - Supply (Vcc/Vdd) Not Required
Current - Output (Max) 14A
Rds On (Typ) 100mOhm (Max)
Input Type Non-Inverting
Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number VNB10

Descripción general

Description

The VNB10N07TR-E is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features a maximum drain-source voltage (Vds) of 70V and a continuous drain current (Id) of 10A, making it suitable for various power management applications such as motor control, power supplies, and lighting systems.
Key specifications include a low on-state resistance (Rds(on)), which enhances efficiency by minimizing power losses during operation. It typically has a threshold voltage (Vgs(th)) of 2-4V and a fast switching speed, which helps in reducing switching losses.
The device is housed in a TO-220 package, facilitating efficient heat dissipation, and is commonly used in automotive, industrial, and consumer electronics. Its robust design ensures reliability under demanding conditions.
Overall, the VNB10N07TR-E is an effective choice for designers looking to improve the efficiency and performance of power electronic systems.

Features

The VNB10N07TR-E is an N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 70V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 10A, allowing it to manage significant power loads.
3. R_DS(on): Low on-resistance of approximately 10 mΩ, which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage (V_GS(th)): Typical threshold voltage ranges from 2V to 4V, enabling efficient switching.
5. Fast Switching Speed: Designed for high-speed switching, suitable for applications like DC-DC converters and motor drives.
6. Package Type: Available in a TO-220 package for easy heat dissipation and mounting.
Overall, the VNB10N07TR-E is well-suited for applications requiring efficient power management and thermal performance.

Package

The VNB10N07TR-E is typically packaged in a TO-220 or similar form factor, which is a widely used package type for power MOSFETs. This packaging allows for efficient heat dissipation and easy mounting on circuit boards.

Pinout

The VNB10N07TR-E is a high-side N-channel MOSFET driver. It typically comes in a TO-220 package with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to drive the gate of the MOSFET to control its on/off state.
2. Source (S): This pin is connected to the source of the MOSFET, which is typically connected to the load or ground in high-side applications.
3. Drain (D): This pin connects to the load, allowing current to flow from the power supply, through the MOSFET, and to the load.
The device is designed for high current applications, providing efficient control of power to various loads. Be sure to refer to the datasheet for detailed specifications and electrical characteristics.

Manufacturer

The VNB10N07TR-E is manufactured by STMicroelectronics. STMicroelectronics is a multinational semiconductor company headquartered in Geneva, Switzerland. It specializes in the design, development, and supply of a wide range of semiconductor products, including analog, digital, and mixed-signal devices. The company serves various industries such as automotive, industrial, consumer electronics, and telecommunications, providing solutions for applications like power management, microcontrollers, and sensors. STMicroelectronics is recognized for its innovation in semiconductor technology and its commitment to sustainability.

Application

The VNB10N07TR-E is a high-power N-channel MOSFET commonly used in applications such as motor control, power management, and automotive electronics. Its features make it suitable for driving inductive loads, switching power supplies, and LED lighting systems. Additionally, it is found in consumer electronics and industrial automation for efficient energy conversion and control.

Equivalent

The VNB10N07TR-E is a high-side N-channel MOSFET typically used in automotive applications. Equivalent products include the BTS7002, BTS6001, and BTA20-600V, which also provide high-side switching capabilities. Always check for specific electrical characteristics and packaging when considering alternatives.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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