UCC27200DDAR

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UCC27200DDAR

IC GATE DRVR HALF-BRIDGE 8SOPWR

  • Fabricante
  • Mfr. Parte #UCC27200DDAR
  • Paquete HSOIC-8
  • Hoja de datos
  • En stock3360

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Especificaciones

Package Tape & Reel (TR),Bulk
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType N-Channel MOSFET
Voltage-Supply 8V ~ 17V
LogicVoltage-VILVIH 3V, 8V
Current-PeakOutput(SourceSink) 3A, 3A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 120 V
Rise/FallTime(Typ) 8ns, 7ns
OperatingTemperature -40°C ~ 140°C (TJ)
MountingType Surface Mount
Package/Case 8-PowerSOIC (0.154, 3.90mm Width)

Descripción general

Description

UCC27200DDAR is a Texas Instruments dual MOSFET gate-driver IC. It provides two fast, independent outputs to drive external N‑channel MOSFETs in power-conversion topologies (typically half-bridge or full-bridge).
Key points:
- Dual gate-driver: one high-side and one low-side (or two independent channels as configured).
- Supports bootstrapped high-side drive and level-shifted inputs.
- Built-in protections: undervoltage lockout and fault/shoot-through protection.
- Fast rise/fall times and suitable for high-speed switching to reduce losses.
- Common applications: DC-DC converters, motor drives, power inverters, and Class D amplifiers.
- DDAR suffix: packaging/reel option for TI supply; consult the datasheet for exact package type and mechanical details.
For exact electrical specs (Vcc range, gate-drive current, propagation delay, dead-time control), refer to the UCC27200 datasheet and TI product page.

Features

Here are the key features of the UCC27200DDAR gate driver:
- Dual, high-side and low-side gate driver for N‑channel MOSFETs in a half-bridge configuration
- Bootstrapped high-side drive, allowing HO to switch referenced to the switching node
- Wide bus/ HV range up to ~600 V for the high-side portion
- Independent HO and LO outputs with strong drive (fast source/sink) to rapidly charge/discharge MOSFET gates
- Logic inputs compatible with 3.3 V and 5 V logic levels
- Enable/shutdown control and under-voltage lockout to prevent unstable or cross-conduction conditions
- Protections and safe-start sequencing (UVLO on both channels, preventing unwanted gate drive)
- Wide operating temperature range (typ. -40°C to 125°C)
- Package: DDAR (8-pin) with TI-standard, compact surface-mount format
Note: For exact electrical specs (drive current, propagation delays, UVLO thresholds, rise/fall times, etc.) and packaging details, please refer to the latest TI UCC27200DDAR datasheet.

Package

UCC27200DDAR is an 8‑pin small‑outline IC (SOIC/SOP‑8). The AR suffix indicates tape‑and‑reel RoHS packaging.

Pinout

- Pin count: 8 pins.
- Function: Dual high-side/low-side gate driver for N-channel MOSFETs. Provides two outputs (HO and LO) controlled by inputs HIN and LIN; uses a bootstrap supply (VB–VS) for the high-side driver, with VCC and GND as logic power/return. Suitable for driving a half-bridge.

Manufacturer

- Manufacturer: Texas Instruments Incorporated (TI).
- What kind of company: An American multinational semiconductor company that designs and manufactures analog, mixed-signal, and embedded processing integrated circuits.

Application

UCC27200DDAR is a dual high-side/low-side MOSFET gate driver. Common applications include:
- Switching power supplies and DC-DC converters (buck, boost, flyback, LLC)
- Synchronous rectification and multiphase converters
- Power adapters and battery chargers
- Industrial and telecom equipment
- Motor-control gate drive in low- to mid-power systems

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