TK39A60W

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TK39A60W

  • Fabricante
  • Mfr. Parte #TK39A60W
  • Paquete
  • Hoja de datos
  • En stock4068

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Especificaciones

Brand Toshiba

Descripción general

Description

The TK39A60W is a high-performance power MOSFET designed for various applications in power management, including converters and inverters. This component features a low on-resistance, which enhances efficiency by minimizing power losses. It supports high voltage and current ratings, making it suitable for demanding environments. The device is primarily used in areas such as automotive electronics, industrial equipment, and renewable energy systems.
Key specifications typically include a maximum drain-source voltage (Vds), a maximum continuous drain current (Id), and a low gate threshold voltage (Vgs). Additionally, its fast switching capabilities contribute to improved system responsiveness and efficiency. The TK39A60W is often housed in a compact package, facilitating easy integration into circuit designs.
For optimal performance, it’s important to consider proper thermal management and drive circuitry when implementing this MOSFET in a project. Overall, the TK39A60W is a versatile choice for engineers looking to enhance their power electronic designs.

Features

The TK39A60W is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Continuous Drain Current: Up to 39A, allowing for robust performance.
3. RDS(on): Low on-resistance (typically around 1.8Ω), minimizing power loss during operation.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, ideal for high-frequency applications.
5. Thermal Performance: Capable of handling high temperatures, with a maximum junction temperature of 150°C.
6. Package Type: Available in TO-220 and other packages, facilitating easy mounting and heat dissipation.
7. Applications: Commonly used in power supplies, motor drivers, and industrial equipment.
These features make the TK39A60W suitable for various applications requiring reliable power management and efficiency.

Package

The TK39A60W is packaged in a TO-220 form factor, which is a popular package type for power semiconductors, providing good thermal performance and ease of mounting.

Pinout

The TK39A60W is a high-voltage MOSFET designed for power applications. It typically comes in a TO-220 package, which features a pin count of three. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin connects to the load and is where the current flows out when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the circuit, completing the path for the current.
The TK39A60W is rated for a maximum drain-source voltage of 600V and a continuous drain current of 39A, making it suitable for applications in power supplies, inverters, and motor drives.

Manufacturer

The TK39A60W is manufactured by Toshiba, a multinational conglomerate company based in Japan. Toshiba operates in various sectors, including electronics, electrical equipment, and information technology. Established in 1875, Toshiba is known for its innovation in areas such as semiconductors, storage devices, and imaging technology. The company has a diverse portfolio, encompassing consumer electronics, industrial systems, and infrastructure solutions, and it has a strong global presence. Toshiba is committed to sustainability and advancing technology to enhance quality of life.

Application

The TK39A60W is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as industrial motor drives, power inverters for renewable energy systems, welding equipment, induction heating, and traction drives for electric trains. Its ability to handle high voltages and currents makes it suitable for energy-efficient power conversion and control in various electronic applications.

Equivalent

The TK39A60W is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) typically used in power electronics applications. Equivalent products include the FGA39N60, IXGH39N60, and HGTG39N60. Always verify specifications and ratings to ensure compatibility for your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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