TH58NYG3S0HBAI4

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TH58NYG3S0HBAI4

IC FLASH 8GBIT PARALLEL 63TFBGA

  • Fabricante
  • Mfr. Parte #TH58NYG3S0HBAI4
  • Paquete TFBGA-63
  • Hoja de datos
  • En stock4581

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Especificaciones

Package Tray
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 8Gb (1G x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 25ns
AccessTime 25 ns
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

Descripción general

Description

TH58NYG3S0HBAI4 is a specific model of NAND flash memory produced by Toshiba. It is part of their line of NAND flash chips used in various electronic devices for data storage. The "TH" prefix typically indicates Toshiba's product line, while the subsequent alphanumeric characters specify the model and specifications, including density, interface, and performance features.
This NAND flash memory is commonly used in applications such as smartphones, tablets, SSDs, and other consumer electronics due to its reliability and speed. The characteristics of this specific model may include its memory architecture, storage capacity, read/write speeds, and endurance levels, which are crucial for ensuring efficient data management in modern technology.
For detailed specifications, including capacity and performance metrics, referring to the product datasheet provided by Toshiba or authorized distributors is recommended.

Features

The TH58NYG3S0HBAI4 is a NAND flash memory chip produced by Toshiba. Key features include:
1. Type: NAND Flash, specifically SLC (Single-Level Cell) or MLC (Multi-Level Cell) variants, depending on the application.
2. Capacity: Typically available in various densities, supporting a range of applications.
3. Interface: Utilizes a parallel or serial interface, facilitating ease of integration into various devices.
4. Endurance: Designed for high cycle endurance, suitable for enterprise and industrial applications.
5. Data Retention: Offers reliable data retention, ensuring data integrity over time.
6. Power Consumption: Optimized for low power consumption, making it suitable for battery-operated devices.
7. Temperature Range: Capable of operating in a wide temperature range, enhancing its usability in harsh environments.
This chip is commonly used in consumer electronics, automotive, and industrial applications due to its reliability and performance characteristics.

Package

The TH58NYG3S0HBAI4 is a NAND flash memory chip housed in a TSOP (Thin Small Outline Package) package type. This packaging is commonly used for memory devices, allowing for a compact design suitable for various electronic applications.

Pinout

The TH58NYG3S0HBAI4 is a NAND Flash memory chip produced by Toshiba. It typically features a pin count of 48 pins in a TSOP (Thin Small Outline Package) configuration.
The primary function of the TH58NYG3S0HBAI4 is to provide non-volatile storage, making it suitable for various applications such as smartphones, tablets, SSDs, and other consumer electronics. It operates using standard NAND Flash memory protocols, allowing for data storage, retrieval, and management. This chip supports features like multiple plane operations and enhanced error correction capabilities, contributing to improved performance and reliability in data storage applications.

Manufacturer

The TH58NYG3S0HBAI4 is manufactured by Toshiba Memory Corporation, a subsidiary of Toshiba Corporation. Toshiba Memory specializes in the production of flash memory products, including NAND flash and SSDs. The company is a key player in the semiconductor industry and is focused on developing advanced memory solutions for a wide range of applications, including consumer electronics, data centers, and mobile devices. Toshiba Memory is known for its innovation and technology leadership in the storage sector, providing high-performance memory products to meet the growing demands of modern computing and data storage needs.

Application

TH58NYG3S0HBAI4 is a type of NAND flash memory primarily used in consumer electronics, such as smartphones, tablets, and SSDs. Its applications include data storage for operating systems, applications, and multimedia files. Additionally, it is utilized in industrial and automotive sectors for data logging and firmware storage, leveraging its reliability and performance in diverse environments.

Equivalent

The TH58NYG3S0HBAI4 chip is a NAND flash memory component. Equivalent products include:
1. Samsung K9F4G08U0A
2. Micron MT29F4G08ABAEAWP
3. SK Hynix H26M21001G2
4. Toshiba TH58NYG3S0HBAA
Verifying compatibility with specific applications is essential before substituting any components.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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