TC58BVG0S3HTA00

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TC58BVG0S3HTA00

IC FLASH 1GBIT PARALLEL 48TSOP I

  • Fabricante
  • Mfr. Parte #TC58BVG0S3HTA00
  • Paquete TSOP-48
  • Hoja de datos
  • En stock7522

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Especificaciones

Package Tray
Series Benand™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 1Gb (128M x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 25ns
AccessTime 25 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature 0°C ~ 70°C (TA)
MountingType Surface Mount
Package/Case 48-TFSOP (0.724, 18.40mm Width)

Descripción general

Description

The TC58BVG0S3HTA00 is a NAND flash memory device manufactured by Toshiba, specifically designed for use in various applications such as smartphones, tablets, and other consumer electronics. It features a 3D NAND architecture, which increases storage density and performance while reducing power consumption. The device typically offers high read and write speeds, making it suitable for applications requiring fast data access.
This specific model is part of Toshiba's line of memory solutions that cater to the growing demand for high-capacity storage in compact form factors. It usually supports multiple data interfaces, enabling compatibility with various systems. The TC58BVG0S3HTA00 is known for its reliability and endurance, making it a popular choice among OEMs for embedded storage solutions. Its advanced error correction and wear-leveling algorithms enhance data integrity and longevity, crucial for maintaining performance in high-write-cycle environments.

Features

The TC58BVG0S3HTA00 is a NAND flash memory device manufactured by Toshiba. Key features include:
1. Capacity: It typically offers a storage capacity of 128GB, making it suitable for various applications including mobile devices and embedded systems.
2. Interface: Utilizes a serial NAND interface, which allows for easy integration into existing systems.
3. Process Technology: Built on advanced 3D NAND technology, optimizing storage density and performance.
4. Speed: Provides fast read and write speeds, enhancing overall system performance.
5. Endurance: Designed for high endurance, making it reliable for write-intensive applications.
6. Power Efficiency: Offers low power consumption, which is crucial for battery-operated devices.
7. Data Reliability: Features advanced error correction and data management technologies to ensure data integrity.
These attributes make the TC58BVG0S3HTA00 suitable for a variety of consumer electronics, automotive applications, and industrial uses.

Package

The TC58BVG0S3HTA00 is a NAND flash memory chip packaged in a 63-ball BGA (Ball Grid Array) format. This type of package allows for efficient heat dissipation and compact design, suitable for applications in mobile devices and other electronic equipment.

Pinout

The TC58BVG0S3HTA00 is a 3D NAND flash memory chip produced by Toshiba (now Kioxia). It typically features a package with a pin count of 48 pins.
The primary functions of the TC58BVG0S3HTA00 include non-volatile data storage, supporting various applications such as smartphones, tablets, and other consumer electronics. It utilizes the SATA interface for data transfer and is designed for high-density storage with enhanced performance and reliability. The chip incorporates advanced features like error correction and wear leveling to ensure data integrity and longevity.
For specific details about its pin configuration and exact functions, checking the official datasheet is recommended.

Manufacturer

The TC58BVG0S3HTA00 is manufactured by Toshiba Memory Corporation, which is now known as Kioxia Corporation. Kioxia is a global leader in flash memory and solid-state drives (SSDs), specializing in NAND flash memory technologies. The company was established as a spin-off from Toshiba's memory business in 2017 and has since focused on developing advanced storage solutions for a variety of applications, including consumer electronics, data centers, and mobile devices. Kioxia is recognized for its innovation in memory technology and plays a significant role in the semiconductor industry.

Application

The TC58BVG0S3HTA00 is a NAND flash memory device commonly used in various applications, including smartphones, tablets, digital cameras, and other portable electronic devices. It is also utilized in solid-state drives (SSDs) for laptops and desktops, automotive infotainment systems, and IoT devices, providing high-speed data storage, efficient power consumption, and durability for demanding environments.

Equivalent

The TC58BVG0S3HTA00 is a NAND flash memory chip produced by Toshiba. Equivalent products include the Samsung K9GAG08U0M and the Micron MT29F8G08ABAEAWP. Always verify compatibility based on specifications such as capacity, interface, and voltage before replacement.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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