TC58BVG0S3HBAI4

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TC58BVG0S3HBAI4

IC FLASH 1GBIT PARALLEL 63TFBGA

  • Fabricante
  • Mfr. Parte #TC58BVG0S3HBAI4
  • Paquete TFBGA-63
  • Hoja de datos
  • En stock5772

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Especificaciones

Package Tray
Series Benand™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 1Gb (128M x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 25ns
AccessTime 25 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

Descripción general

Description

The TC58BVG0S3HBAI4 is a NAND flash memory chip produced by Toshiba, designed for use in various electronic devices such as smartphones, tablets, and solid-state drives (SSDs). This specific model is part of Toshiba's lineup of NAND flash products, characterized by its high storage capacity, fast data transfer rates, and reliability.
Key features typically include advanced 3D NAND technology, which enhances performance and endurance, and multiple interface options for flexibility in integration. The TC58BVG0S3HBAI4 is suitable for applications requiring high-speed data access and efficient power consumption, making it ideal for both consumer and industrial uses.
Overall, this NAND flash memory is distinguished by its combination of performance, capacity, and efficiency, catering to the growing demand for high-performance storage solutions in modern electronics.

Features

The TC58BVG0S3HBAI4 is a 3D NAND flash memory chip from Toshiba (now Kioxia) designed for high-performance storage applications. Key features include:
- Flash Type: 3D NAND, which allows for higher density and improved performance compared to traditional 2D NAND.
- Storage Capacity: Typically offered in various capacities, supporting applications ranging from consumer electronics to enterprise storage solutions.
- Interface: Utilizes a standard interface for compatibility with various devices, often featuring SATA or PCIe options.
- Performance: Enhanced read/write speeds, making it suitable for demanding tasks like high-speed data transfer and real-time applications.
- Durability: Improved endurance and reliability, suitable for write-intensive applications.
- Power Efficiency: Designed for low power consumption, enhancing battery life in portable devices.
Overall, the TC58BVG0S3HBAI4 is aimed at delivering high capacity, performance, and efficiency for modern storage needs.

Package

The TC58BVG0S3HBAI4 is a NAND flash memory device typically offered in a BGA (Ball Grid Array) package type. This packaging provides efficient thermal performance and a compact footprint suitable for various applications in consumer electronics and embedded systems.

Pinout

The TC58BVG0S3HBAI4 is a NAND flash memory chip with a pin count of 48 pins. It is designed for use in various applications, including consumer electronics and industrial devices. The primary function of this chip is to provide non-volatile storage, allowing for the storage and retrieval of data even when the power is turned off. It utilizes a Serial Peripheral Interface (SPI) for communication, making it suitable for embedded systems where space and power efficiency are critical. The device supports features such as high-speed data transfer and wear leveling, enhancing its performance and longevity in demanding applications.

Manufacturer

The TC58BVG0S3HBAI4 is manufactured by Toshiba Memory Corporation, which is now known as Kioxia Corporation. Kioxia is a leading company in the flash memory and storage solutions industry, specializing in NAND flash memory products. Established as a subsidiary of Toshiba Corporation, Kioxia became an independent entity in 2018. The company focuses on developing advanced memory technologies for a variety of applications, including data centers, consumer electronics, and mobile devices. Kioxia is known for its innovation in flash memory technology, contributing significantly to the evolution of storage solutions globally.

Application

The TC58BVG0S3HBAI4 is a NAND flash memory chip primarily used in consumer electronics such as smartphones, tablets, and laptops. It serves applications in data storage, including operating systems, applications, and user data. Additionally, it is suited for industrial applications, automotive systems, and embedded devices, offering high performance and reliability for read/write operations.

Equivalent

The TC58BVG0S3HBAI4 is a Toshiba NAND flash memory chip, specifically a 3-bit per cell (TLC) NAND type. Equivalent products include similar TLC NAND chips from manufacturers like Micron (MT29F), Samsung (K9LAG08U0M), and SK Hynix (H26M31001G). For exact equivalents, consider specifications such as capacity, die configuration, and interface compatibility. Always verify compatibility with your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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