SZNUP3105LT1G

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SZNUP3105LT1G

TVS DIODE 32VWM 66VC SOT23-3

  • Fabricante
  • Mfr. Parte #SZNUP3105LT1G
  • Paquete SOT23-3
  • Hoja de datos
  • En stock6762

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
Type Zener
BidirectionalChannels 2
Voltage-ReverseStandoff(Typ) 32V (Max)
Voltage-Breakdown(Min) 35.6V
Voltage-Clamping(Max)@Ipp 66V
Current-PeakPulse(10/1000µs) 8A (8/20µs)
Power-PeakPulse 350W
PowerLineProtection No
Applications Automotive, CAN
Capacitance@Frequency 30pF @ 1MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Descripción general

Description

SZNUP3105LT1G is a specific model of a low-dropout (LDO) voltage regulator produced by ON Semiconductor. It is designed to provide a stable output voltage with a low input-output voltage differential, which makes it ideal for battery-powered applications where efficiency is crucial. The LDO typically features a low quiescent current, making it suitable for devices that require long battery life.
This regulator can handle a range of output currents and offers protection features such as thermal shutdown and current limiting, ensuring reliable operation. The "LT" in its designation signifies that it is designed for low noise, making it suitable for sensitive analog circuits.
Applications for the SZNUP3105LT1G include portable electronics, consumer devices, and other applications where a stable voltage supply is essential. Its compact package and efficiency make it a popular choice in modern electronic designs.

Features

The SZNUP3105LT1G is a low-voltage N-channel MOSFET specifically designed for various electronic applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V.
2. Continuous Drain Current: It has a high continuous drain current capability, typically around 5.2A.
3. R_DS(on): The on-resistance is low, typically around 10mΩ at V_GS = 10V, enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2V, allowing for effective control in low-voltage applications.
5. Package Type: It is available in a compact surface-mount package (SO-8), making it suitable for space-constrained designs.
6. Fast Switching Speed: The device exhibits fast switching capabilities, ideal for high-frequency applications.
7. RoHS Compliant: The MOSFET is compliant with RoHS standards, ensuring it is environmentally friendly.
These features make the SZNUP3105LT1G suitable for power management, load switching, and other applications in consumer electronics and automotive systems.

Package

The SZNUP3105LT1G is packaged in a SOT-23 (Small Outline Transistor) package type.

Pinout

The SZNUP3105LT1G is a low-power N-channel MOSFET with a pin count of 5. Its primary functions include switching and amplification in various electronic applications. The device is designed to handle a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 3.5A, making it suitable for efficient power management in mobile and battery-operated devices.
The pin configuration is typically as follows:
1. Gate (G) – Controls the switching of the MOSFET.
2. Drain (D) – The terminal through which current flows out.
3. Source (S) – The terminal through which current flows in.
The SZNUP3105LT1G is often used in power management applications, load switching, and low-voltage digital circuits. It is available in a compact SOT-23 package, which aids in space-saving designs. Its low R_DS(on) ensures minimal power loss during operation.

Manufacturer

The SZNUP3105LT1G is manufactured by ON Semiconductor. ON Semiconductor is a multinational company that specializes in semiconductor solutions and is known for its wide range of products, including analog, digital, and mixed-signal integrated circuits, as well as discrete components and sensors. The company serves various industries, such as automotive, industrial, communications, and consumer electronics, focusing on energy efficiency and sustainability in its designs.

Application

The SZNUP3105LT1G is a low-voltage, high-speed Schottky diode primarily used in applications such as reverse polarity protection, flyback diodes in power converters, clamping circuits, and signal rectification. Its fast switching speed and low forward voltage drop make it suitable for power management systems, RF applications, and automotive electronics.

Equivalent

The SZNUP3105LT1G is a low-voltage, low-power, N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170, which share similar characteristics like voltage ratings and on-resistance. However, always verify specific parameters such as V_DS, I_D, and R_DS(on) to ensure compatibility for your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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