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SVF4N65F
- Fabricante
- Mfr. Parte #SVF4N65F
- Paquete
- Hoja de datos SVF4N65F DataSheet
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Especificaciones
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 4A |
| Pd - Power Dissipation | 30W |
| Drain to Source Voltage | 650V |
| RDS(on) | 2.7Ω@10V,2A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 12.5nC@10V |
| Input Capacitance(Ciss@Vds) | 430pF@25V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF@25V |
Descripción general
Description
Key specifications include a low on-resistance (R_DS(on)), which minimizes power loss during operation, and a fast switching speed, enhancing efficiency in applications such as power supplies and motor drives. The SVF4N65F is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on heat sinks.
This device is primarily used in scenarios requiring reliable operation under high-voltage conditions, such as in inverters, converters, and various electronic systems. Proper thermal management and gate drive voltage considerations are essential for optimal performance and longevity in circuits utilizing this MOSFET.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: It supports a maximum continuous drain current (I_D) of 4A, allowing for substantial current flow.
3. Low Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low (typically in the range of 2-4V), enabling easier drive control.
4. R_DS(on): It has a low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing efficiency.
5. Fast Switching Speed: The device features fast switching capabilities, making it ideal for applications like switch-mode power supplies (SMPS) and inverters.
6. Package Type: Typically available in a TO-220 package, providing good thermal performance and ease of heat dissipation.
Overall, the SVF4N65F is well-suited for use in high-efficiency power electronics applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A positive voltage applied here relative to the source allows current to flow from drain to source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the reference pin for the MOSFET. Current flows out of the source when the device is conducting.
4. Body Diode (not a pin, but an internal feature): The SVF4N65F also contains a body diode that allows current to flow in the reverse direction when the MOSFET is off.
The SVF4N65F is designed for high-voltage applications, with a maximum drain-source voltage of 650V, making it suitable for power switching applications.
Manufacturer
Application
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