STW75N60M6

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STW75N60M6

MOSFET N-CH 600V 72A TO247

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  • Mfr. Parte #STW75N60M6
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Especificaciones

Series MDmesh™ M6
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 100 V
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW75

Descripción general

Description

The STW75N60M6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from STMicroelectronics, specifically designed for high-efficiency switching applications. It is part of the MDmesh™ M6 series, which focuses on delivering improved performance for various power electronics applications.
Key features of the STW75N60M6 include a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 75A. It comes with a low R_DS(on), which minimizes conduction losses and contributes to higher efficiency in power conversion systems. The device is housed in a TO-247 package, which offers good thermal performance, making it suitable for high-power applications.
The STW75N60M6 is typically used in applications such as power supplies, motor drives, inverters, and other systems that require efficient power management. Its advanced design ensures reduced switching losses, enhanced ruggedness, and reliability in operation, making it a preferred choice for engineers working on improving the efficiency and performance of electronic power systems.

Features

The STW75N60M6 is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and can handle a continuous drain current (I_D) of 75A.
2. R_DS(on): The device offers a low on-resistance, typically around 0.018 Ohms, minimizing power losses and improving efficiency.
3. Technology: It utilizes MDmesh™ M6 technology, which enhances switching performance and energy efficiency.
4. Fast Switching: The MOSFET is optimized for fast switching, making it suitable for applications like power converters and inverters.
5. Thermal Performance: It is designed for enhanced thermal performance, thanks to its low thermal resistance.
6. Package: Comes in a TO-247 package, which is suitable for high-power applications, providing good heat dissipation.
7. Applications: Ideal for various applications including power supplies, motor control, and other high-efficiency power management systems.
These features make the STW75N60M6 a robust choice for demanding environments requiring high efficiency and reliability.

Package

The STW75N60M6 is a power MOSFET, and its package type is TO-247.

Pinout

The STW75N60M6 is a power MOSFET manufactured by STMicroelectronics. It has a total of 3 pins. The pin configuration typically includes:
1. Gate (G): This pin is used to control the MOSFET’s switching operation. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This is the pin through which the current flows from the source when the MOSFET is in the 'on' state, essentially acting as the input.
3. Source (S): This pin acts as the output where the current exits the MOSFET when it is conducting.
The STW75N60M6 is part of the MDmesh™ M6 series, characterized by its low on-resistance and high-speed switching capability, making it suitable for high-efficiency power conversion applications. It operates with a drain-source voltage (V_DS) of 600V and a drain current capacity (I_D) of 75A.

Manufacturer

The STW75N60M6 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs and manufactures a wide range of semiconductor products. It operates in various sectors, including automotive, industrial, personal electronics, communications equipment, and the Internet of Things (IoT). The company is known for its innovation and development of integrated circuits and discrete devices, providing solutions for energy management, motor control, and smart driving, among other applications. It is headquartered in Geneva, Switzerland, and has a strong presence worldwide, serving customers through its extensive network of sales offices and manufacturing facilities.

Application

The STW75N60M6 is a power MOSFET designed for applications such as power supply units, motor control systems, uninterruptible power supplies (UPS), and renewable energy systems like solar inverters. It is also used in industrial automation and automotive applications where high efficiency and robust performance are required. Its 600V rating makes it suitable for high-voltage applications, and it is often employed in circuits requiring fast switching and high power density.

Equivalent

The STW75N60M6 is a 600V, 75A N-channel MOSFET from STMicroelectronics. Equivalent products include the IRFP4668 from Infineon, the FDP75N60 from ON Semiconductor, and the IXFH60N60 from IXYS. These alternatives share similar voltage and current ratings and are used in high-power applications. However, always verify specific parameters and characteristics to ensure compatibility for your particular application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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