STW70N65DM6

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STW70N65DM6

MOSFET N-CH 650V 68A TO247

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Especificaciones

Series MDmesh™ DM6
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 100 V
Power Dissipation (Max) 450W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW70

Descripción general

Description

The STW70N65DM6 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring efficient power management. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 70A, making it suitable for high-voltage switching applications like power supplies, motor drives, and automotive systems.
This MOSFET incorporates advanced technology to achieve low on-state resistance (R_DS(on)), typically around 0.18 ohms, which enhances efficiency by reducing power losses during operation. It also has a fast switching capability, minimizing switching losses and improving overall system performance.
The device is housed in a TO-220 package, allowing for effective heat dissipation. Additionally, it has built-in protection features that make it reliable for demanding applications. Overall, the STW70N65DM6 is a versatile component for engineers looking to design efficient and robust power electronic systems.

Features

The STW70N65DM6 is an N-channel MOSFET with several key features:
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of 650V.
2. Continuous Drain Current: It has a maximum continuous drain current (I_D) of 70A at 25°C.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 0.14 ohms, which reduces power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, making it compatible with various driving levels.
5. Thermal Characteristics: The device has a maximum junction temperature of 175°C and good thermal performance, allowing for reliable operation under high-power conditions.
6. Fast Switching: It features fast switching capabilities, ideal for high-efficiency applications.
7. Package Type: Available in a TO-220 package, facilitating easy heatsinking.
These characteristics make the STW70N65DM6 suitable for applications in power management, converters, and motor control systems.

Package

The STW70N65DM6 is packaged in a TO-247 format, which is commonly used for power MOSFETs. This package type features a larger surface area for better thermal management and is suitable for high-power applications.

Pinout

The STW70N65DM6 is an N-channel MOSFET from STMicroelectronics. It features a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage at this pin allows current to flow between the drain and source.

2. Drain (D): This is the terminal where the output current flows from the MOSFET to the load when it is turned on.
3. Source (S): This pin connects to the ground or the negative side of the power supply, allowing the current to return after passing through the load.
4. Body Diode: While not a separate pin, the device includes an intrinsic body diode between the drain and source that allows current to flow in the reverse direction when the MOSFET is off.
The STW70N65DM6 is suitable for applications such as power supplies, motor drives, and other high-efficiency switching applications, with a maximum drain-source voltage of 650V and a continuous drain current of up to 70A.

Manufacturer

The STW70N65DM6 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, memory chips, and power management devices. The company serves various sectors such as automotive, industrial, consumer electronics, and communications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in technologies that drive the Internet of Things (IoT), smart mobility, and energy efficiency.

Application

The STW70N65DM6 is a high-voltage N-channel MOSFET primarily used in power management applications, such as switching power supplies, motor drivers, and industrial automation. Its features make it suitable for high-efficiency converters, renewable energy systems, and electric vehicles. Additionally, it is employed in audio amplifiers and various consumer electronics for efficient power handling and thermal performance.

Equivalent

Equivalent products to the STW70N65DM6 MOSFET include the IRF2804, FDP70N65, and APT70N65. These alternatives share similar voltage and current ratings, typically around 650V and 70A. Always verify datasheets for specific parameters and ensure compatibility with your application.

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