STW62N65M5

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STW62N65M5

MOSFET N-CH 650V 46A TO247

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Especificaciones

Package Tube
Series Automotive, AEC-Q101, MDmesh™ V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 46A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 49mOhm @ 23A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 142 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 6420 pF @ 100 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Descripción general

Description

The STW62N65M5 is an N-channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 62A, making it suitable for power management in industrial and consumer electronics. The device has a low on-resistance (R_DS(on)) of approximately 0.17 ohms, which enhances efficiency by minimizing power loss during operation.
The STW62N65M5 is built using STMicroelectronics' proprietary technology, ensuring fast switching speeds and improved thermal performance. It's commonly used in applications such as switch-mode power supplies (SMPS), motor drives, and other high-voltage switching applications.
Key parameters include a gate threshold voltage (V_GS(th)) range of 2-4V, allowing for easy integration into various circuits. The MOSFET is available in a TO-220 package, facilitating robust thermal management and mounting options. Overall, the STW62N65M5 is a reliable choice for designers seeking efficient and high-performance power solutions.

Features

The STW62N65M5 is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, suitable for demanding environments.
2. Continuous Drain Current: The device can handle up to 62A of continuous current at a temperature of 25°C, providing high efficiency in power applications.
3. R_DS(on): It offers a low on-resistance of 0.17Ω, which minimizes conduction losses and improves thermal performance.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, ensuring reliable switching.
5. Fast Switching: Designed for efficient switching frequencies, it reduces switching losses in applications like SMPS and motor drives.
6. Package Type: Available in a TO-247 package, which provides good thermal dissipation capabilities.
Overall, the STW62N65M5 is ideal for power management applications requiring high efficiency and reliability.

Package

The STW62N65M5 is packaged in a TO-247 package type. This package is designed for high-power applications, featuring a robust structure that aids in heat dissipation.

Pinout

The STW62N65M5 is an N-channel MOSFET designed for high-voltage applications. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The terminal through which the current flows out when the MOSFET is on.
3. Source (S): The terminal through which the current enters when the MOSFET is on; typically connected to the ground in low-side switching applications.
4. Body Diode: Integrated within the structure, allowing current to flow in the reverse direction when the MOSFET is off, useful for certain applications.
5. Heatsink Tab: Not a pin but often included in the package for thermal management.
The STW62N65M5 is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 62A, making it suitable for power conversion and motor control applications.

Manufacturer

The STW62N65M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor devices and integrated circuits for various applications, including automotive, industrial, consumer electronics, and communication sectors. The company is headquartered in Geneva, Switzerland, and is one of the largest semiconductor companies in the world. They focus on innovation and sustainability, providing solutions that enhance efficiency and performance in electronic systems. The STW62N65M5 is a N-channel MOSFET used in power management applications, showcasing STMicroelectronics' expertise in high-performance components.

Application

The STW62N65M5 is a high-voltage N-channel MOSFET primarily used in power electronics applications such as switch-mode power supplies, motor drivers, and industrial automation. Its features make it suitable for high-efficiency converters, automotive applications, and renewable energy systems like solar inverters. Additionally, it can be used in lighting control and electronic ballast circuits.

Equivalent

The STW62N65M5 is a N-channel MOSFET with a voltage rating of 650V and a current rating of 62A. Equivalent products include the Infineon IRF2804, ON Semiconductor NTB65N65, and Vishay IGT65R065. Always verify specifications such as RDS(on), gate charge, and package type for compatibility in specific applications.

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