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STW45NM60
MOSFET N-CH 650V 45A TO247-3
- Fabricante
- Mfr. Parte #STW45NM60
- Paquete TO-247
- Hoja de datos STW45NM60 DataSheet
- En stock6857
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Especificaciones
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 110mOhm @ 22.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 134 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3800 pF @ 25 V |
| PowerDissipation(Max) | 417W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Descripción general
Description
Key features include a low on-resistance (Rds(on)) that minimizes conduction losses, a fast switching speed that enhances efficiency, and a robust built-in protection against thermal runaway. It typically has a gate threshold voltage (Vgs) of 2-4V, facilitating easy driving from standard logic levels. The device is housed in a TO-220 package, allowing for effective heat dissipation and easy integration into power circuits.
Its performance characteristics make the STW45NM60 a reliable choice for engineers looking to design efficient, high-performance power systems.
Features
1. Low On-Resistance (R_DS(on)): Typically around 0.07 ohms, which minimizes conduction losses.
2. High Speed: Fast switching capabilities, suitable for applications in power supplies and motor control.
3. Thermal Performance: Designed with a high maximum junction temperature of 150°C, enhancing reliability in demanding environments.
4. Gate Threshold Voltage: Low threshold voltage enables efficient driving with lower gate voltages.
5. Robust Package: Available in TO-220 and D2PAK packages for effective heat dissipation.
6. Safe Operating Area: Designed to operate safely over a wide range of temperatures and conditions.
These features make the STW45NM60 suitable for applications in industrial equipment, power inverters, and other high-power electronics.
Package
Pinout
1. Gate (G): Controls the MOSFET operation; applying a voltage to this pin allows current to flow from drain to source.
2. Drain (D): The terminal where the current enters when the device is on; it connects to the load.
3. Source (S): The terminal where the current exits; typically connected to ground in standard configurations.
This MOSFET is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and continuous drain current (I_D) of 45A. It features low on-resistance, making it suitable for power management in various applications, including power supplies and motor control.
Manufacturer
Application
Equivalent
1. IRF320 - N-channel MOSFET
2. FQP45N60 - N-channel MOSFET
3. MTP45N60 - N-channel MOSFET
4. AUIRF320 - N-channel MOSFET
These alternatives may have similar specifications regarding voltage, current, and on-resistance, but verify the datasheets for specific applications.
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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