STW31N65M5

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STW31N65M5

MOSFET N-CH 650V 22A TO247

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Especificaciones

Package Tube
Series MDmesh™ V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 22A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 148mOhm @ 11A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 45 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 816 pF @ 100 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Descripción general

Description

The STW31N65M5 is a high-voltage N-channel MOSFET designed for power management applications. It features a breakdown voltage of 650V, making it suitable for use in demanding environments such as switch-mode power supplies (SMPS), motor drives, and industrial applications.
With a low on-resistance (R_DS(on)) of 0.31Ω, it provides efficient conduction, minimizing power losses during operation. The device can handle continuous drain currents up to 31A, allowing for effective performance in high-power applications.
Additionally, the STW31N65M5 is housed in a TO-220 package, facilitating easy heat dissipation and mounting. It is characterized by fast switching capabilities, which are essential for high-frequency applications.
Overall, the STW31N65M5 is an ideal choice for engineers seeking reliability and efficiency in high-voltage power electronics.

Features

The STW31N65M5 is a high-voltage N-channel MOSFET designed for various power applications. Here are its key features:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 650V.
2. Current Rating: Continuous drain current (I_D) of 31A, making it suitable for high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of about 0.45Ω (at V_GS = 10V), which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage: Suitable for logic-level operations with a gate threshold voltage (V_GS(th)) ranging from 2V to 4V.
5. Fast Switching: Optimized for fast switching applications, contributing to improved performance in power converters.
6. Thermal Performance: High maximum junction temperature (T_J) of 150°C, allowing for robust thermal management.
7. Package: Available in a TO-220 package, facilitating easy heat dissipation.
These features make the STW31N65M5 ideal for use in switch-mode power supplies, motor drivers, and other high-voltage applications.

Package

The STW31N65M5 is packaged in a TO-220 casing. This type of package is designed for high-power applications, providing effective heat dissipation and allowing for easy mounting on heatsinks.

Pinout

The STW31N65M5 is a high-voltage N-channel MOSFET with a pin count of 4. Its pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The drain pin is where the load is connected, and the current flows out of this terminal when the MOSFET is turned on.
3. Source (S): The source pin is typically connected to ground or the negative side of the power supply, allowing current to flow into the drain from the source when activated.
4. Body Diode: Internally integrated, it provides path for reverse current and improves reliability in certain applications, though it is typically considered a part of the structure rather than a separate pin.
The STW31N65M5 is designed for applications requiring high voltage (650V) and high current (31A), making it suitable for switch-mode power supplies and other high-power applications.

Manufacturer

The STW31N65M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and provides a wide range of products including microcontrollers, sensors, power management devices, and various discrete components. The company serves multiple sectors, including automotive, industrial, personal electronics, and communication. Established through the merger of SGS Microelettronica and Thomson Semiconducteurs in 1987, STMicroelectronics has a strong presence in Europe, Asia, and the Americas, and focuses on innovation in energy efficiency and connectivity technologies.

Application

The STW31N65M5 is a high-voltage N-channel MOSFET primarily used in power conversion applications. Key application areas include switch-mode power supplies (SMPS), motor drivers, industrial power management, and renewable energy systems like solar inverters. Its high voltage rating and low on-resistance make it suitable for efficient switching in both consumer and industrial electronics.

Equivalent

The STW31N65M5 is a 650V N-channel MOSFET. Equivalent products include:
1. IRF840 - 500V, 8A
2. FQP30N60 - 600V, 30A
3. MTP50N60E - 600V, 50A
4. STP65NF75 - 750V, 65A
Always check the specific datasheets for detailed specifications to ensure suitability for your application.

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