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STW20NM60
MOSFET N-CH 600V 20A TO247-3
- Fabricante
- Mfr. Parte #STW20NM60
- Paquete TO-247
- Hoja de datos STW20NM60 DataSheet
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Especificaciones
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 290mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 54 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1500 pF @ 25 V |
| PowerDissipation(Max) | 192W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Descripción general
Description
The STW20NM60 is characterized by its fast switching capabilities, making it suitable for high-frequency applications. It typically includes a built-in gate protection feature to enhance reliability. The MOSFET comes in a TO-220 package, facilitating easy heat dissipation and mounting.
Applications include switch-mode power supplies (SMPS), industrial and automotive power converters, and other high-voltage applications. Overall, the STW20NM60 is an efficient and reliable choice for designers looking for robust performance in high-voltage environments.
Features
1. Voltage Rating: It can withstand a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of up to 20A at a case temperature of 25°C.
3. On-Resistance: It has a low on-resistance (RDS(on)) of around 0.20 ohms, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2 to 4V, allowing for easy driving with standard logic levels.
5. Fast Switching: The STW20NM60 features fast switching times, making it suitable for switching applications in power supplies and converters.
6. Thermal Performance: Designed with robust thermal characteristics, it supports heat dissipation, essential for high-power applications.
These features make the STW20NM60 ideal for use in various applications, including motor drives, switch-mode power supplies, and inverters.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for the current flowing through the device.
The STW20NM60 is designed for high-voltage applications, with a maximum voltage rating of 600V and a continuous drain current of up to 20A, making it suitable for various power switching applications.
Manufacturer
Application
Equivalent
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