STW12NK80Z

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STW12NK80Z

MOSFET N-CH 800V 10.5A TO247-3

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  • Mfr. Parte #STW12NK80Z
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Especificaciones

Supplier STMicroelectronics
Package Tube
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 10.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 750mOhm @ 5.25A, 10V
Vgs(th)(Max)@Id 4.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 87 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2620 pF @ 25 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Descripción general

Description

STW12NK80Z is an STMicroelectronics N-channel IGBT in the STW12 family. It targets high‑voltage, medium‑current switching for PWM power electronics in 800 V class applications such as switch‑mode power supplies, motor drives, solar inverters, and UPS front ends.
Key points:
- Blocking voltage around 800 V; continuous collector current about 12 A (with proper heatsinking).
- Fast switching suitable for PWM control.
- Gate drive typically around 15 V (external drive circuitry required).
- Rugged device designed for power switching stressed by short‑circuit events.
- Available in common discrete packages (e.g., TO‑220, D²PAK, IPAK) for through‑hole or surface‑mount designs.
Note: Exact Vcesat, switching times, safe operating area, and thermal characteristics vary with temperature and board layout. Refer to the ST datasheet for precise ratings and package options before design or procurement.

Features

STW12NK80Z is an N-channel, high-voltage power MOSFET. Key features:
- Blocking voltage: 800 V (VDS)
- Continuous drain current: about 12 A
- On-resistance: typically ~0.8 Ω (max around 1.0 Ω)
- Gate: enhancement-mode; VGS(th) ~2–4 V; fully on at ~10 V
- Fast switching capability with low gate charge
- Avalanche ruggedness and wide SOA for reliable switching
- Suitable for high-voltage SMPS, PFC, inverters, and similar power-conversion apps
Note: exact packaging options vary (e.g., TO-220AB and D²PAK variants), check the datasheet for precise parameters and package availability.

Package

TO-220AB (through-hole) package.

Pinout

STW12NK80Z is a 3-pin N‑channel power MOSFET (through‑hole package with a metal tab). Pinout and functions:
- Pin 1: Gate (G) — control terminal that turns the channel on/off.
- Pin 2: Drain (D) — high‑voltage drain; also connected to the metal tab/heatsink.
- Pin 3: Source (S) — return/current output from the channel.
Function: an 800 V, high‑voltage N‑channel enhancement MOSFET for power switching; gate voltage controls current flow between drain and source. It also includes the intrinsic body (freewheeling) diode.

Manufacturer

- Manufacturer: STMicroelectronics (ST)
- What kind of company: A global semiconductor company that designs, manufactures, and sells a broad range of electronic components and systems (discretes, power devices, MEMS/sensors, MCUs, analog ICs). Headquartered in Geneva, Switzerland, with worldwide operations.

Application

STW12NK80Z is an 800 V, 12 A N-channel MOSFET for high-voltage switching.
Typical applications:
- Offline switch-mode power supplies (PFC, flyback/LLC)
- AC/DC adapters and battery chargers
- Solar inverters and UPS systems
- Motor drives and other industrial HV switching circuits

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