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STW12N120K5
MOSFET N-CH 1200V 12A TO247
- Fabricante
- Mfr. Parte #STW12N120K5
- Paquete TO-247
- Hoja de datos STW12N120K5 DataSheet
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Especificaciones
| Package | Tube |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 690mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 44.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1370 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Descripción general
Description
With low on-resistance (R_DS(on)) and fast switching capabilities, the STW12N120K5 minimizes power losses, enhancing efficiency in various applications. Its gate threshold voltage (V_GS(th)) is designed to ensure easy drive capability with standard gate drive circuits.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V, a total gate charge (Q_g) that allows for quick switching, and high ruggedness against avalanche conditions, ensuring reliability under harsh operating conditions. This makes the STW12N120K5 a popular choice for engineers looking to design robust, efficient power electronic systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (Id) of up to 12A at a temperature of 25°C.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 0.14 ohms, reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, ensuring efficient turn-on characteristics.
5. Fast Switching: The MOSFET is designed for fast switching times, enabling improved efficiency in power conversion applications.
6. Package Type: It is available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Applications: Commonly used in switch-mode power supplies, inverter applications, and motor control circuits.
Overall, the STW12N120K5 is ideal for high-efficiency power management solutions in demanding environments.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on, enabling current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to the ground or the lower potential in the circuit.
The STW12N120K5 is designed for high-voltage applications, with a breakdown voltage of 1200V and a continuous drain current rating of 12A, making it suitable for power switching applications.
Manufacturer
Application
Equivalent
1. IRF840
2. STP12NK60Z
3. MTP12N120
4. FQP12N120
5. PST120N12
Always verify specifications such as RDS(on), gate charge, and thermal characteristics before substitution.
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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