STP8N120K5

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STP8N120K5

MOSFET N-CH 1200V 6A TO220

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Especificaciones

Supplier STMicroelectronics
Package Tube
Series MDmesh™ K5
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2Ohm @ 2.5A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 13.7 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds 505 pF @ 100 V
PowerDissipation(Max) 130W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Descripción general

Description

The STP8N120K5 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications that require efficient power management and switching. It features a maximum drain-source voltage (V_DSS) of 120V and a continuous drain current (I_D) of 8A, making it suitable for various high voltage applications such as power supplies, motor drives, and industrial equipment.
Key features include low on-resistance (R_DS(on)), which improves efficiency by reducing power losses during operation, and a fast switching speed, enabling effective control in fast-switching applications. The device is housed in a TO-220 package, which ensures good thermal performance and ease of mounting to heat sinks.
The STP8N120K5 is commonly used in applications that require high efficiency and reliability, making it a popular choice among engineers in the field of electronics and power management. It is essential to consult the datasheet for detailed specifications and recommended operating conditions.

Features

The STP8N120K5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 120V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (ID) of up to 8A, allowing it to manage significant loads.
3. On-Resistance: It has a low on-resistance (RDS(on)) of approximately 0.5 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, ensuring it can be driven easily with standard logic levels.
5. Package Type: Available in a TO-220 package, it provides good thermal performance, facilitating heat dissipation.
6. Applications: Ideal for power management, switch-mode power supplies, and motor control.
Overall, the STP8N120K5 is valued for its efficiency, reliability, and versatility in various electronic circuits.

Package

The STP8N120K5 is typically offered in a TO-220 package type. This package allows for efficient heat dissipation and is commonly used for power transistors in various applications.

Pinout

The STP8N120K5 is an N-channel MOSFET with a total of three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or lower potential in the circuit. Current exits through this pin when the device is conducting.
The STP8N120K5 is designed for high-voltage applications, rated for 1200V and can handle a continuous drain current of up to 8A under specified conditions.

Manufacturer

The STP8N120K5 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital devices, as well as automotive and industrial applications. The company serves various sectors, including consumer electronics, automotive, communications, and industrial markets. With a strong focus on innovation, STMicroelectronics plays a crucial role in advancing technology and providing integrated solutions for a connected world.

Application

The STP8N120K5 is a N-channel MOSFET primarily used in power management applications, including switching power supplies, motor control, and automotive applications. Its high voltage and current handling capabilities make it suitable for use in converters, inverters, and various electronic devices requiring efficient power switching. Additionally, it can be utilized in industrial equipment and lighting control circuits.

Equivalent

The STP8N120K5 is an N-channel MOSFET with a 1200V rating and 8A continuous current. Equivalent products include the IRF840, IRF250, and MTP12N120E. Always verify specifications such as RDS(on), VGS(th), and current ratings to ensure compatibility for specific applications.

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