STP25NM60N

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STP25NM60N

MOSFET N-CH 600V 21A TO220AB

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  • Mfr. Parte #STP25NM60N
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Especificaciones

Supplier STMicroelectronics
Package Tube
Series MDmesh™ II
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 21A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 160mOhm @ 10.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 84 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2400 pF @ 50 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Descripción general

Description

STP25NM60N is STMicroelectronics’ N‑channel enhancement MOSFET (STPower family). It is a high‑voltage, high‑current power transistor intended for switching power electronics.
Key points:
- VDS: 600 V; ID: ~25 A
- Built with a trench MOSFET structure for relatively lower on‑resistance and fast switching
- Includes an intrinsic body diode and rugged avalanche energy rating
- Gate drive: typically operate with about 10 V for low RDS(on); 4.5 V is not guaranteed to be fully on
- Available in multiple packages (e.g., TO‑220/TO‑263/D²PAK variants)
- Applications: high‑voltage DC‑DC converters, motor drives, inverters, power supplies
For exact RDS(on) values, gate charge (Qgs/Qgd), safe operating area, and thermal specs, consult the latest datasheet and the specific device variant you plan to use.

Features

STP25NM60N is an STMicroelectronics N-channel Power MOSFET. Key features:
- 600 V blocking voltage, enhancement-mode N-channel device
- 25 A continuous drain current
- On-resistance designed for 600 V class (low for the family; typical values near 0.8–1.0 Ω, max higher)
- Trench MOSFET technology for fast switching and reasonable gate charge
- Gate threshold around 2–4 V; typically driven at 10 V for full enhancement
- Avalanche-rated with rugged SOA for inductive-load applications
- Wide temperature operation (high junction-temp capability; suitable for OEM power designs)
- Available in common power packages (e.g., TO-220AB, D²PAK/IPAK variants)
- RoHS-compliant and suitable for SMPS, motor control, inverters, and high-voltage switch-mode power supplies
For exact parameters (Rds(on), EAS, packaging, and safe operating area), refer to the latest ST datasheet.

Package

TO-220AB through-hole package. STP25NM60N is an N-channel MOSFET in the TO-220AB package (drain tab connected to the heatsink).

Pinout

3 pins (TO‑220 leaded, plus the tab). Pinout (left to right, front view): 1 = Gate, 2 = Drain (tab also connected to Drain), 3 = Source. It is an N‑channel enhancement‑mode power MOSFET (600 V, 25 A).

Manufacturer

The STP25NM60N is manufactured by STMicroelectronics. STMicroelectronics is a multinational semiconductor company (an integrated device manufacturer) that designs and produces a broad range of semiconductors—power MOSFETs, analog and mixed-signal ICs, microcontrollers, sensors and more—with global R&D and manufacturing operations.

Equivalent

Look for N‑channel 600 V MOSFETs with similar Id (~25 A), RDS(on) and package. Common equivalents to STP25NM60N include: STW25NM60N (ST), NTD/NTP25N60 series (ON Semiconductor), IXFH/IXFN25N60 series (IXYS), and SiHF25N60 (Vishay). Verify VDS, ID, RDS(on), package and switching/thermal specs on datasheets before substituting.

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