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STP21N90K5
MOSFET N-CH 900V 18.5A TO220-3
- Fabricante
- Mfr. Parte #STP21N90K5
- Paquete
- Hoja de datos STP21N90K5 DataSheet
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Especificaciones
| Series | SuperMESH5™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | STP21 |
Descripción general
Description
Key features include a low on-resistance (R_DS(on)) which helps improve efficiency by minimizing power loss during operation. It is typically housed in a TO-220 package, facilitating thermal management and easy mounting on heatsinks. The device is designed for applications in power supplies, inverters, and motor control systems.
The STP21N90K5 operates in a wide temperature range and is characterized by fast switching speeds, making it ideal for high-frequency applications. Its robust construction ensures reliability in demanding environments. Overall, this MOSFET is a popular choice for engineers seeking efficient and reliable high-voltage switching solutions.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: The device has a continuous drain current (I_D) rating of 21A, allowing it to drive substantial loads.
3. On-Resistance: It has a low on-resistance (R_DS(on)), typically around 0.5Ω, which reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is around 2-4V, enabling it to be driven with lower voltage signals.
5. Fast Switching: Designed for efficient switching, the device exhibits minimal switching losses, enhancing overall efficiency.
6. Package Type: It is typically available in a TO-220 package, which aids in heat dissipation.
These features make the STP21N90K5 suitable for applications in power supplies, converters, and other power electronics.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from drain to source.
2. Drain (D): This pin is the output terminal through which the current flows when the MOSFET is turned on.
3. Source (S): This pin is the input terminal where the current enters when the MOSFET is conducting.
The device is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of 21A, making it suitable for various switching and amplification applications in power management systems.
Manufacturer
Application
Equivalent
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