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STP140NF75
MOSFET N-CH 75V 120A TO220AB
- Fabricante
- Mfr. Parte #STP140NF75
- Paquete TO-220
- Hoja de datos STP140NF75 DataSheet
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Especificaciones
| Package | Tube |
| Series | STripFET™ III |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7.5mOhm @ 70A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 218 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5000 pF @ 25 V |
| PowerDissipation(Max) | 310W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Descripción general
Description
With a maximum gate-source voltage (V_GS) of ±20V, the STP140NF75 can be driven easily by common gate drive circuits. It exhibits fast switching speeds, making it ideal for applications such as DC-DC converters, motor drivers, and power management systems.
Additionally, the MOSFET is housed in a TO-220 package, which provides good thermal performance, allowing for effective heat dissipation. Its robust construction and reliable performance make the STP140NF75 a popular choice in the design of power electronic systems.
Features
1. Low R_DS(on): Offers a low on-state resistance (typically around 0.017 Ω) to reduce conduction losses.
2. Fast Switching: Enables efficient operation in high-frequency applications, making it suitable for various power management tasks.
3. High Thermal Performance: Comes with a TO-220 package that facilitates effective heat dissipation, supporting robust performance at elevated temperatures.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, allowing for easy interfacing with low-voltage control circuits.
5. Integrated Body Diode: Provides reverse conduction capability, beneficial for applications like synchronous rectification.
These features make the STP140NF75 ideal for motor drives, power supplies, and other high-power applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's on/off state. A positive voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): The drain is where the main current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source is where the current exits the MOSFET. It is typically connected to ground or a lower potential in circuits.
4. Body Diode (internal): The MOSFET also includes a body diode, which allows current to flow in the reverse direction (from source to drain) when the device is off.
5. Tab/Heatsink: The metal tab or heatsink is used for thermal management and is typically connected to the source.
This MOSFET is designed for high efficiency and is suitable for various applications in power management and switching.
Manufacturer
Application
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