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STP12NM50FP
MOSFET N-CH 500V 12A TO220FP
- Fabricante
- Mfr. Parte #STP12NM50FP
- Paquete
- Hoja de datos STP12NM50FP DataSheet
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Especificaciones
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 350mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 39 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1000 pF @ 25 V |
| PowerDissipation(Max) | 35W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Descripción general
Description
This MOSFET includes a low gate threshold voltage, enabling it to switch on efficiently, which reduces power loss during operation. Its low R_DS(on) value minimizes conduction losses when the device is in the ON state. The device is housed in a TO-220 package, making it easy to mount and dissipate heat effectively.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a total gate charge (Q_g) that supports fast switching applications. The STP12NM50FP is particularly valued for its robustness, thermal stability, and suitability for switching applications in DC-DC converters and inverter circuits. Overall, this MOSFET is an excellent choice for reliable and efficient power control.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 12A, enabling efficient power management.
3. R_DS(on): The on-resistance is low (typically around 0.8 ohms), resulting in reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage: It operates with a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, allowing for flexibility in driving requirements.
5. Package Type: The device is available in a TO-220 package, ensuring good thermal performance and ease of heat dissipation.
6. Fast Switching Speed: It offers fast switching capabilities, making it suitable for applications like switch-mode power supplies and motor drives.
These features make the STP12NM50FP an ideal choice for high-voltage and high-efficiency designs in industrial and consumer electronics.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is where the current flows out of the MOSFET. It connects to the load in a typical application.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, providing a return path for the current.
The STP12NM50FP is rated for a maximum drain-source voltage (V_DS) of 500V, a continuous drain current (I_D) of 12A, and has low on-resistance (R_DS(on)), making it suitable for high-voltage applications in power conversion and switching.
Manufacturer
Application
Equivalent
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