STP12NM50

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STP12NM50

MOSFET N-CH 500V 12A TO220AB

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Especificaciones

Package Tube
Series MDmesh™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 350mOhm @ 6A, 10V
Vgs(th)(Max)@Id 5V @ 50µA
GateCharge(Qg)(Max)@Vgs 39 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1000 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Descripción general

Description

The STP12NM50 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 12A, making it suitable for power switching in various circuits, including power supplies and motor drivers.
This device boasts a low on-resistance (R_DS(on)), which minimizes power loss and enhances efficiency when the transistor is in the 'on' state. The STP12NM50 is designed for easy integration into circuits, with a gate threshold voltage (V_GS(th)) that allows for straightforward driving with standard logic-level signals.
It is commonly used in applications requiring high voltage and current handling, including audio amplifiers, industrial drives, and automotive electronics. Understanding its specifications and thermal characteristics is crucial for effective implementation in electronic designs.

Features

The STP12NM50 is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage switching.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 12A, enabling robust performance in power applications.
3. On-Resistance: The typical on-resistance (R_DS(on)) is around 0.65Ω at a gate-source voltage (V_GS) of 10V, promoting efficient operation with reduced power loss.
4. Thermal Management: It offers a high thermal dissipation capability, with a maximum junction temperature of 150°C, allowing for reliable operation in various environments.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2-4V, facilitating easy drive with low gate voltage.
6. Package: Available in TO-220 and DPAK packages, it provides versatility for PCB design.
These characteristics make the STP12NM50 suitable for applications like power supplies, motor drives, and inverters.

Package

The STP12NM50 is typically available in a TO-220 package type. This package provides good thermal performance and is commonly used for power transistors in applications requiring high voltage and current handling.

Pinout

The STP12NM50 is a N-channel MOSFET with 12A continuous current capability and a 500V drain-source breakdown voltage. It features a TO-220 package, which has three pins:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage here allows the device to conduct between the drain and source.
2. Drain (D) - This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the drain.
The STP12NM50 is suitable for applications such as power supplies, motor control, and other switching applications due to its high voltage and current handling capabilities.

Manufacturer

The STP12NM50 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is involved in the design, development, manufacturing, and marketing of a wide range of semiconductor products. These include power management devices, microcontrollers, and analog ICs, among others. The company serves various sectors, including automotive, industrial, consumer electronics, and communications. STMicroelectronics is known for its innovation and is a significant player in the semiconductor industry, focusing on energy efficiency and high-performance technologies.

Application

The STP12NM50 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switching power supplies, motor drivers, and converters in industrial equipment, lighting controls, and consumer electronics. Additionally, it's suitable for applications requiring high efficiency and thermal performance, such as in renewable energy systems and electric vehicles.

Equivalent

Equivalent products to the STP12NM50 MOSFET include the IRF250, STP11NM50, FQP13N50, and MTP12NM50. These devices share similar voltage and current ratings, typically around 500V and 12A. Always verify specifications like RDS(on) and gate threshold voltage before substitution.

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