STP11NM80

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STP11NM80

MOSFET N-CH 800V 11A TO220AB

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Especificaciones

Series MDmesh™
Part Status Active
Base Product Number STP11
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43.6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package TO-220-3
Packaging Tube

Descripción general

Description

The STP11NM80 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a high breakdown voltage of 800V and a continuous drain current rating of 11A, making it suitable for high-voltage power switching applications. The device has low on-resistance (R_DS(on)), which enhances efficiency and reduces power losses during operation.
Key characteristics include fast switching speeds and the ability to handle high power, making it ideal for use in various applications such as power supplies, motor drives, and inverters. The STP11NM80 is often used in conjunction with other components in power electronics designs to improve overall system performance.
It comes in a standard TO-220 package, which facilitates easy thermal management and mounting. Overall, the STP11NM80 is a reliable choice for engineers seeking efficient and robust solutions in high-voltage electronic circuits.

Features

The STP11NM80 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 800V, making it suitable for high-voltage applications.
2. Current Rating: 11A continuous drain current, allowing it to handle substantial loads.
3. RDS(on): Low on-state resistance (around 0.9 ohms), which reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage: Typically between 2-4V, facilitating easy driving with low gate voltage.
5. Fast Switching Speed: Suitable for high-frequency applications, improving performance in switching converters.
6. Package Type: Available in TO-220 and DPAK packages, offering flexibility in thermal management and mounting options.
7. Safe Operating Area (SOA): Ensures reliable operation under specified conditions.
These features make the STP11NM80 ideal for use in power supplies, motor control, and various switching applications.

Package

The STP11NM80 is typically packaged in a TO-220 format. This package type is designed for power transistors, providing efficient heat dissipation and ease of mounting to heatsinks for effective thermal management.

Pinout

The STP11NM80 is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the MOSFET.
The STP11NM80 is designed for applications requiring high voltage (up to 800V) and high current (up to 11A), making it suitable for power switching applications.

Manufacturer

The STP11NM80 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor products, including analog, digital, and mixed-signal devices. The company serves various markets, including automotive, industrial, personal electronics, communications, and consumer applications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates in multiple countries and is recognized for its innovations in microelectronics and commitment to sustainability. The STP11NM80 specifically is a power MOSFET that is typically used in applications such as power management and conversion, making it suitable for various electronic devices and systems.

Application

The STP11NM80 is an N-channel MOSFET used in various applications, including power supplies, motor control, and lighting systems. Its high voltage and current handling capabilities make it suitable for industrial equipment, switch-mode power supplies (SMPS), and high-efficiency converters. Additionally, it can be applied in automotive electronics and home appliances for efficient switching and amplification in power management circuits.

Equivalent

The STP11NM80 is an N-channel MOSFET with a 80V rating and a maximum continuous drain current of 11A. Equivalent products include the IRF840, FQP13N80C, and MTP11N80E. Always check the datasheet for specifications like RDS(on), gate threshold voltage, and package type to ensure compatibility with your application.

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