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STN1NK80Z
MOSFET N-CH 800V 250MA SOT223
- Fabricante
- Mfr. Parte #STN1NK80Z
- Paquete SOT-223
- Hoja de datos STN1NK80Z DataSheet
- En stock3551
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 250mA (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 16Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 7.7 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 160 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
Descripción general
Description
Features
1. Voltage Rating: It typically has a high drain-to-source voltage (VDS) rating, making it suitable for high-voltage applications.
2. Current Rating: It supports significant continuous drain current, enabling efficient power delivery.
3. Low On-Resistance (RDS(on)): This characteristic minimizes power losses and improves overall efficiency during operation.
4. Fast Switching Speed: It allows for rapid turn-on and turn-off times, enhancing performance in switching applications.
5. Thermal Stability: Designed to operate effectively across a wide temperature range, ensuring reliability under various thermal conditions.
6. Package Types: Available in different package configurations, facilitating easy integration into circuit designs.
7. Gate Threshold Voltage: Optimized for low gate drive requirements, allowing compatibility with various control signals.
These features make the STN1NK80Z ideal for applications such as DC-DC converters, motor controls, and other power management solutions.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching operation.
2. Drain (D) - The terminal through which current flows out of the MOSFET when it is on.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body (B) - Typically connected to the source, it serves as a substrate for the MOSFET.
This component is suitable for applications like power supplies, motor control, and lighting systems, owing to its ability to manage higher voltages and currents efficiently.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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