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STL45N65M5
MOSFET N-CH 650V 22.5A PWRFLAT
- Fabricante
- Mfr. Parte #STL45N65M5
- Paquete PowerFLAT-8
- Hoja de datos STL45N65M5 DataSheet
- En stock2340
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 3.8A (Ta), 22.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 86mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 82 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 3470 pF @ 100 V |
| PowerDissipation(Max) | 2.8W (Ta), 160W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerFLAT™ (8x8) |
Descripción general
Description
Key specifications include a low on-resistance (Rds(on)) typically around 0.40 ohms, which contributes to reduced power losses and improved thermal performance. The device is optimized for use in switch-mode power supplies, inverters, and other high-frequency applications, allowing for efficient energy conversion.
The STL45N65M5 has a gate threshold voltage (Vgs(th)) ranging from 2V to 4V, ensuring it can be driven effectively in various circuit designs. Its fast switching capabilities and robust construction enhance its reliability under high-stress conditions. The package is typically available in TO-220, making it easy to integrate into existing designs. Overall, the STL45N65M5 is a versatile choice for engineers seeking reliable performance in demanding applications.
Features
1. Voltage Rating: 650V maximum drain-source voltage.
2. Current Rating: Continuous drain current up to 45A, with a pulsed current capability of 180A.
3. Low On-Resistance: R_DS(on) is typically 0.55Ω, providing efficient operation and reduced power loss.
4. Fast Switching Speed: Optimized for low gate charge (Q_g = 57nC), allowing for efficient switching in high-frequency applications.
5. Thermal Performance: Enhanced thermal management due to a high junction-to-ambient thermal resistance rating.
6. Package: Available in an TO-220 package, which provides effective heat dissipation.
7. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, suitable for logic-level driving.
These features make the STL45N65M5 ideal for applications requiring high efficiency and reliability in power management systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D): The drain pin is the output of the MOSFET, where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): The source pin is connected to the ground or the negative terminal of the power supply. It serves as the reference point for the gate voltage.
4. Body Diode (intrinsic): The MOSFET includes an intrinsic body diode that conducts in the reverse direction (from source to drain) when the drain is at a lower potential than the source.
5. Tab (Thermal): The tab is typically tied to the source and is used for heat dissipation.
This MOSFET is suitable for applications in power management, switch-mode power supplies, and motor control, with a maximum drain-source voltage of 650V.
Manufacturer
Application
Equivalent
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Payment Methods
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