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STGWT80H65DFB
IGBT 650V 120A 469W TO3P-3L
- Fabricante
- Mfr. Parte #STGWT80H65DFB
- Paquete TO-3P
- Hoja de datos STGWT80H65DFB DataSheet
- En stock6148
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Especificaciones
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 120 A |
| Current-CollectorPulsed(Icm) | 240 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 80A |
| Power-Max | 469 W |
| SwitchingEnergy | 2.1mJ (on), 1.5mJ (off) |
| InputType | Standard |
| GateCharge | 414 nC |
| Td(on/off)@25°C | 84ns/280ns |
| TestCondition | 400V, 80A, 10Ohm, 15V |
| ReverseRecoveryTime(trr) | 85 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
Descripción general
Description
Key features include low on-resistance (RDS(on)), which minimizes power losses during operation, and fast switching speeds that enhance efficiency in switching applications. The device is housed in a TO-220 package, facilitating good thermal performance and ease of heatsinking.
Typically, the STGWT80H65DFB is utilized in scenarios where efficiency and thermal management are critical, and it is favored in designs requiring robust performance under high-stress conditions. Its compatibility with standard driver circuits also makes it a versatile choice for engineers looking to optimize their power electronic solutions.
Features
1. Low Rds(on): This ensures reduced conduction losses and enhanced efficiency during operation.
2. Fast switching speed: Facilitates high-frequency operation, minimizing switching losses.
3. Thermal stability: The device is optimized for thermal performance, allowing better heat dissipation.
4. Avalanche rated: Provides additional reliability in transient conditions.
5. TO-220 package: Offers easy mounting and heat sinking options for better thermal management.
Overall, the STGWT80H65DFB is ideal for applications requiring high efficiency and reliability in power electronics.
Package
Pinout
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal through which current flows out of the MOSFET.
3. Source (S) - The terminal through which current flows into the MOSFET.
4-8. Additional Drain/Source Pins - These may be used for enhanced current handling or thermal performance.
The key functions of the pins are as follows:
- Gate (G): Used to switch the MOSFET on and off by applying a voltage.
- Drain (D): Connected to the load in a typical application.
- Source (S): Connected to the ground or negative supply in a circuit.
This MOSFET is designed for applications requiring high efficiency and fast switching, making it suitable for power converters, motor drives, and other high-frequency applications.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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