STGP8NC60KD

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STGP8NC60KD

IGBT 600V 15A TO-220

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  • Mfr. Parte #STGP8NC60KD
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Especificaciones

Series PowerMESH™
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 15 A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 3A
Power - Max 65 W
Switching Energy 55µJ (on), 85µJ (off)
Input Type Standard
Gate Charge 19 nC
Td (on/off) @ 25°C 17ns/72ns
Test Condition 390V, 3A, 10Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number STGP8
Current - Collector Pulsed (Icm) 30 A
Reverse Recovery Time (trr) 23.5 ns

Descripción general

Description

The STGP8NC60KD is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications in power electronics. It features a voltage rating of 600V and a continuous drain current of up to 8A, making it suitable for high-voltage and medium-power applications. The device is characterized by low on-resistance (RDS(on)), which enhances efficiency by reducing power losses during operation.
It is particularly useful in switch-mode power supplies, motor drives, and other applications requiring efficient switching capabilities. The STGP8NC60KD is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting on heat sinks.
Key specifications include fast switching speeds, high-speed operation, and a wide safe operating area (SOA), making it a versatile choice for engineers looking to optimize circuit performance. The device’s robustness and reliability make it suitable for a variety of industrial applications.

Features

The STGP8NC60KD is a high-voltage N-channel power MOSFET designed for various applications, including industrial and consumer electronics. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_ds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_d) of up to 8A, providing good performance in power management.
3. R_DS(on): It has a low on-state resistance, typically around 0.5 ohms, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_gs(th)) is low, allowing for easy drive with standard logic levels.
5. Fast Switching: Designed for high-speed switching applications, minimizing switching losses.
6. Package: Available in an TO-220 package, facilitating effective heat dissipation.
7. Applications: Suitable for use in switch-mode power supplies (SMPS), motor control, and inverter circuits.
Overall, the STGP8NC60KD combines robustness with efficiency, making it a versatile choice for power electronic designs.

Package

The STGP8NC60KD is packaged in a TO-220 format, which is a type of through-hole package commonly used for power transistors and MOSFETs, providing good thermal performance and heat dissipation.

Pinout

The STGP8NC60KD is a high-voltage, N-channel MOSFET from STMicroelectronics, designed for various applications in power electronics. It has a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a positive voltage turns the device on, allowing current to flow from drain to source.
2. Drain (D): This is the output pin where the load is connected. The drain carries the current when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current.
4. Body Diode: Integrated within the MOSFET, it allows current to flow in the reverse direction and is essential for applications involving inductive loads.
5. Tab: Often connected to the source or ground, it facilitates heat dissipation.
The STGP8NC60KD is capable of handling high voltage (up to 600V) and high current, making it suitable for applications like power supplies and motor drives.

Manufacturer

The STGP8NC60KD is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including power management devices, microcontrollers, sensors, and analog ICs. The company serves various sectors, such as automotive, industrial, personal electronics, and telecommunications, providing innovative technologies that enable energy efficiency and connectivity. STMicroelectronics is known for its commitment to sustainability and advancing technology for a smarter, more efficient future.

Application

The STGP8NC60KD is a high-voltage N-channel MOSFET primarily used in power applications such as switch mode power supplies (SMPS), automotive systems, motor drives, and industrial equipment. Its features make it suitable for applications requiring high efficiency and fast switching capabilities, including inverters, converters, and power amplifiers.

Equivalent

The STGP8NC60KD is an N-channel MOSFET. Equivalent products include:
1. IRF840
2. FQP8N60C
3. MTP8N60E
4. STP8NC60
5. P8NK60Z
Always verify specifications like voltage, current, and package type when selecting an equivalent.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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