STGD6NC60HDT4

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STGD6NC60HDT4

IGBT 600V 15A 56W DPAK

  • Fabricante
  • Mfr. Parte #STGD6NC60HDT4
  • Paquete TO-252-3
  • Hoja de datos
  • En stock3300

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerMESH™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 15 A
Current-CollectorPulsed(Icm) 21 A
Vce(on)(Max)@VgeIc 2.5V @ 15V, 3A
Power-Max 56 W
SwitchingEnergy 20µJ (on), 68µJ (off)
InputType Standard
GateCharge 13.6 nC
Td(on/off)@25°C 12ns/76ns
TestCondition 390V, 3A, 10Ohm, 15V
ReverseRecoveryTime(trr) 21 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Descripción general

Description

The STGD6NC60HDT4 is a power MOSFET from STMicroelectronics, designed for high-voltage applications. It features a voltage rating of 600V and a continuous drain current capacity of 6A. This device is part of the STG series, which emphasizes low on-resistance and fast switching capabilities, making it suitable for various applications like power converters, motor drivers, and industrial automation.
Key specifications include a maximum gate-source voltage of ±20V, a low RDS(on) value for improved efficiency, and a typical threshold voltage that allows for reliable operation in switching circuits. The package is typically a TO-220, providing effective thermal management due to its larger surface area.
The STGD6NC60HDT4 is well-regarded for its robustness and suitability in harsh environments, supporting both high-temperature and high-voltage operations. It's an excellent option for engineers seeking reliable performance in power electronics design.

Features

The STGD6NC60HDT4 is a high-performance N-channel MOSFET from STMicroelectronics, designed for use in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 6A, enabling efficient power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)), typically around 0.7 Ohm, which minimizes conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching.
5. Fast Switching: It is designed for high-speed switching applications, reducing losses during operation.
6. Package: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Applications: Commonly used in power supplies, converters, and motor drives.
These features make the STGD6NC60HDT4 suitable for various industrial and consumer applications requiring reliable performance.

Package

The STGD6NC60HDT4 is packaged in a DPAK (TO-252) format, which is a surface-mount device package suitable for power applications.

Pinout

The STGD6NC60HDT4 is a N-channel MOSFET designed for power applications, specifically for use in switch-mode power supplies and motor control. It features a pin count of 4.
The functions of its pins are as follows:
1. Gate (G): This pin controls the MOSFET operation. Applying a voltage here turns the device on or off.
2. Drain (D): This pin is where the load current flows out from the MOSFET.
3. Source (S): This pin is connected to the ground or the reference point of the circuit, allowing current to flow into the MOSFET from the load.
4. Tab/Heat Sink: The metal tab can be connected to the source for thermal management and better heat dissipation.
This MOSFET operates with a breakdown voltage of 600V and has a low on-resistance, making it suitable for high-efficiency applications.

Manufacturer

The STGD6NC60HDT4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its wide range of products, including microcontrollers, power management chips, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company is recognized for its innovative solutions in the field of analog, digital, and mixed-signal technology, providing components essential for modern electronic devices. With a strong focus on research and development, STMicroelectronics aims to drive advancements in technology and support the growing demand for efficient and sustainable electronic products.

Application

The STGD6NC60HDT4 is a high-voltage N-channel MOSFET primarily used in power applications such as industrial motor drives, power supplies, and DC-DC converters. It is suitable for energy-efficient switching in applications like home appliances, lighting control, and electric vehicles. Its features include low on-resistance and fast switching capabilities, making it ideal for high-frequency applications.

Equivalent

The STGD6NC60HDT4 is a 600V N-channel MOSFET. Equivalent products include:
1. IRF840
2. IXFH80N60P
3. FQP50N60
4. STP6NK60Z
5. MTH80N60
Always verify specific parameters like R_DS(on), current rating, and package type when considering replacements.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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2. Tarjeta de crédito/débito

3. Transferencia bancaria

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