STF28N65M2

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STF28N65M2

MOSFET N-CH 650V 20A TO220FP

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Especificaciones

Package Tube
Series MDmesh™ M2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 180mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1440 pF @ 100 V
PowerDissipation(Max) 30W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

Descripción general

Description

The STF28N65M2 is a high-voltage N-channel MOSFET designed for power electronics applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) rating of 28A, making it suitable for use in high-efficiency switch-mode power supplies, motor drives, and other applications requiring robust performance under high voltage conditions.
With a low on-resistance (Rds(on)) specification, it ensures minimal power loss during operation, enhancing the overall efficiency of the system. The device is housed in a TO-220 package, facilitating easy heat dissipation and thermal management.
Additionally, the STF28N65M2 is designed to be reliable with a safe operating area (SOA) that supports a variety of load conditions. Its fast switching capabilities make it ideal for high-frequency applications. Overall, this MOSFET is an excellent choice for engineers seeking reliable and efficient solutions in high-voltage applications.

Features

The STF28N65M2 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: 650V maximum drain-source voltage (V_DS), suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 28A, allowing for significant power handling.
3. On-Resistance: Low R_DS(on) of approximately 0.24Ω at V_GS = 10V, which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, facilitating easier drive requirements.
5. Capacitance: Low input and output capacitance, which aids in fast switching speeds and reduces gate drive losses.
6. Package: Available in a TO-220 package, providing good thermal performance and ease of mounting.
7. Thermal Resistance: Low thermal resistance junction-to-case, enhancing heat dissipation.
These features make the STF28N65M2 suitable for use in power supplies, motor drives, and other high-efficiency applications.

Package

The STF28N65M2 is packaged in a TO-220 format. This package type is designed for efficient heat dissipation, making it suitable for high-power applications.

Pinout

The STF28N65M2 is an N-channel MOSFET with a total of 6 pins. Its pin configuration is as follows:
1. Gate (G): This pin controls the switching of the MOSFET.
2. Drain (D): The current flows out of this pin when the MOSFET is in the on state.
3. Source (S): This pin serves as the return path for the current.
The other three pins are typically used for additional functions such as improving thermal performance or providing a mechanism for mounting, depending on the specific package type (e.g., TO-220, DPAK, etc.).
The STF28N65M2 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 28A. It is commonly used in power supply circuits, converters, and motor control applications.

Manufacturer

The STF28N65M2 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs and produces a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. The company serves various industries, including automotive, consumer electronics, industrial automation, and telecommunications. With a strong focus on innovation and sustainability, STMicroelectronics is known for its high-performance components and solutions that support advanced technologies, including IoT, smart homes, and electric vehicles.

Application

The STF28N65M2 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key application areas include switch-mode power supplies, motor drives, inverters for renewable energy systems, and industrial power management. Additionally, it is suitable for automotive applications and electric vehicles due to its high efficiency and thermal performance.

Equivalent

The STF28N65M2 is a 650V N-channel MOSFET. Equivalent products include:
1. STP28N65M2 - Similar specifications from STMicroelectronics.
2. IRF280N - From Infineon (formerly International Rectifier).
3. MTP28N65E - From ON Semiconductor.
4. BTA28-650V - Another option in similar voltage and current ratings.
Always verify specific parameters like RDS(on), max current, and package type when selecting an equivalent.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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