STF24N60M2

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STF24N60M2

MOSFET N-CH 600V 18A TO220FP

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Especificaciones

Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 190mOhm @ 9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 29 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1060 pF @ 100 V
PowerDissipation(Max) 30W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

Descripción general

Description

The STF24N60M2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 24A, making it suitable for power switching applications in power supplies, motor drives, and converters.
Key specifications include a low on-resistance (R_DS(on)) to minimize conduction losses, fast switching speeds to enhance efficiency, and a robust thermal performance for reliable operation under various conditions. The device is housed in a TO-220 package, which facilitates effective heat dissipation.
The STF24N60M2 is ideal for designs requiring high efficiency and reliability in demanding environments, such as industrial and automotive applications. Its characteristics enable it to handle substantial power loads while maintaining efficiency and thermal stability.

Features

The STF24N60M2 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 24A, providing robust performance in demanding environments.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) of approximately 0.21Ω at V_GS = 10V, it ensures lower conduction losses and higher efficiency.
4. Fast Switching Speed: The device is optimized for fast switching, reducing the switching losses in high-frequency applications.
5. Thermal Management: It features a high maximum junction temperature (T_J) of 175°C, enhancing its reliability under thermal stress.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mechanical mounting.
These characteristics make the STF24N60M2 suitable for various applications, including power supplies, converters, and motor drives.

Package

The STF24N60M2 is packaged in a TO-247 format. This package type is designed for high-power applications, providing robust thermal performance and efficient heat dissipation.

Pinout

The STF24N60M2 is a power MOSFET with a pin count of 4. The pins are designated as follows:
1. Gate (G) - This pin controls the MOSFET's switching; applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - The pin where the load is connected, allowing current to flow out when the MOSFET is on.
3. Source (S) - The pin that connects to the ground or negative side of the circuit; current flows into the source when the MOSFET is conducting.
4. Tab (T) - Often used for heat dissipation, it is typically connected to the source or ground for thermal management.
This transistor is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous current rating of 24A, making it suitable for power conversion and switching applications.

Manufacturer

The STF24N60M2 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products and solutions, including microcontrollers, sensors, power management devices, and various types of transistors, including MOSFETs like the STF24N60M2. The company serves various markets, including automotive, industrial, consumer electronics, and communication, and is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The STF24N60M2 is a high-voltage N-channel MOSFET commonly used in power supply applications, including switch-mode power supplies (SMPS), inverters, and motor control circuits. Its features make it suitable for high-efficiency power conversion, lighting control, and automotive applications. Additionally, it can be used in industrial equipment and renewable energy systems, such as solar inverters.

Equivalent

The STF24N60M2 is a 600V N-channel MOSFET. Equivalent products include:
1. IRF240 - 200V, but commonly used in similar applications.
2. STP24N60M2 - Similar specifications, also from STMicroelectronics.
3. FQP24N60 - Another 600V MOSFET with comparable ratings.
4. IXFH24N60 - Equivalent performance in high-voltage applications.
Always verify specifications like RDS(on), package type, and current ratings before substitution.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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