STF10NM60N

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STF10NM60N

MOSFET N-CH 600V 10A TO220FP

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Especificaciones

Package Tube
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 550mOhm @ 4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 540 pF @ 50 V
PowerDissipation(Max) 25W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

Descripción general

Description

The STF10NM60N is a high-performance N-channel MOSFET designed for power management applications. It is part of the STMicroelectronics family of devices, featuring a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. This MOSFET is optimized for efficiency, offering low on-resistance (R_DS(on)) and fast switching capabilities, making it suitable for use in switch-mode power supplies, motor control, and other high-voltage applications.
The device also incorporates a rugged structure, ensuring high reliability under various operational conditions. Its thermal performance is enhanced with a TO-220 package, which facilitates effective heat dissipation. The STF10NM60N is compatible with standard drive circuits and can be easily integrated into existing designs. Overall, it is an excellent choice for engineers seeking to enhance performance and efficiency in power electronics applications.

Features

The STF10NM60N is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: Continuous drain current (I_D) of 10A, allowing it to handle significant load.
3. On-Resistance: Low on-resistance (R_DS(on)) typically around 0.15 ohms at V_GS = 10V, which helps reduce power losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 2 to 4V, facilitating easy drive with low-voltage logic levels.
5. Package Type: Available in an insulated TO-220 package, providing good thermal performance.
6. Fast Switching Speed: Suitable for high-frequency applications, such as switching power supplies and motor drives.
7. Thermal Resistance: Low thermal resistance, enhancing heat dissipation.
These attributes make the STF10NM60N ideal for applications like power converters, inverters, and electronic ballast systems.

Package

The STF10NM60N is typically available in a TO-247 package type, which is a power transistor package designed for high-power applications. This package provides good thermal performance and is suitable for mounting on heatsinks.

Pinout

The STF10NM60N is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to this pin allows current to flow between the Drain and Source terminals.
2. Drain (D): This pin is where the load current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the load current.
The STF10NM60N is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. This makes it suitable for power conversion applications, such as in switch-mode power supplies and motor drives.

Manufacturer

The STF10NM60N is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in the design, development, and manufacturing of a wide range of semiconductor solutions, including power management devices, microcontrollers, and integrated circuits for various applications such as automotive, industrial, and consumer electronics. The STF10NM60N is a N-channel MOSFET, known for its high voltage capability and efficient performance, making it suitable for power conversion and switching applications.

Application

The STF10NM60N is a N-channel MOSFET primarily used in power electronics applications, including switch-mode power supplies, motor drives, and inverters. Its high voltage rating (600V) and low on-resistance make it suitable for high-efficiency switching applications in industries such as automotive, renewable energy, and consumer electronics. Additionally, it can be used in lighting control and power management systems.

Equivalent

Equivalent products to the STF10NM60N MOSFET include the STP10NM60N, FQA10N60, IRF10N60, and BTA10N60. These alternatives typically feature similar voltage ratings (600V) and current capabilities (10A). Always verify specifications like R_DS(on), gate threshold voltage, and package type for compatibility in your specific application.

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