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STD5N20T4
MOSFET N-CH 200V 5A DPAK
- Fabricante
- Mfr. Parte #STD5N20T4
- Paquete TO-252-3
- Hoja de datos STD5N20T4 DataSheet
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MESH OVERLAY™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 800mOhm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 350 pF @ 25 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Descripción general
Description
Key specifications include a low on-resistance (Rds(on)), which minimizes power loss during operation, and fast switching capabilities that enhance efficiency in various applications, including power supplies, motor drivers, and lighting control. The package type is usually TO-220, facilitating effective heat dissipation.
The STD5N20T4 is known for its reliability and robustness, making it suitable for industrial and consumer electronics. When designing circuits with this MOSFET, careful consideration of thermal management and appropriate gate drive voltage is essential for optimal performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 5A, making it effective for moderate power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, around 0.27 ohms at V_GS = 10V, which reduces power losses during operation.
4. Fast Switching: The device offers fast switching speeds, enhancing efficiency in switching applications.
5. Package Type: It is available in a TO-220 package, providing efficient thermal management.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for easier drive requirements.
Overall, the STD5N20T4 is a versatile component ideal for various electronic circuits requiring reliable high-voltage switching.
Package
Pinout
1. Gate (G): This pin controls the MOSFET operation by applying a voltage to turn it on or off.
2. Drain (D): This is where the load connects and through which the current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply, allowing current to flow from the drain to the source when activated.
The device is designed for high-efficiency switching applications, featuring a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 5A. Its low on-resistance (R_DS(on)) ensures minimal power loss during operation, making it suitable for various applications, including power management and DC-DC converters.
Manufacturer
Application
Equivalent
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