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STD12N50M2
MOSFET N-CH 500V 10A DPAK
- Fabricante
- Mfr. Parte #STD12N50M2
- Paquete TO-252-3
- Hoja de datos STD12N50M2 DataSheet
- En stock7666
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ M2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 380mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 550 pF @ 100 V |
| PowerDissipation(Max) | 85W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Descripción general
Description
Key features include a maximum drain-source voltage (V_DS) of 500 volts and a continuous drain current (I_D) of 12 amps, making it suitable for various power management applications, including switch-mode power supplies, motor drivers, and automotive applications.
The device is housed in a TO-220 package, facilitating efficient heat dissipation. Its low R_DS(on) value contributes to reduced power losses during operation, enhancing overall efficiency.
Applications typically leverage its fast switching speed and robustness, allowing it to handle high-frequency operations while maintaining reliability. When designing circuits with the STD12N50M2, careful consideration should be given to thermal management and electrical characteristics to ensure optimal performance.
Features
1. Low On-Resistance (RDS(on)): Approximately 0.5 ohms, ensuring efficient operation and minimal power loss.
2. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in power supplies and converters.
3. Thermal Stability: Designed to handle high temperatures, with a maximum junction temperature of 175°C, which improves reliability in various environments.
4. Avalanche Rated: Capable of withstanding voltage spikes, making it robust for transient conditions.
5. Package Type: Available in a TO-220 package, facilitating efficient heat dissipation and easy mounting on heatsinks.
Overall, the STD12N50M2 is ideal for switching and amplifying applications in automotive, industrial, and consumer electronics.
Package
Pinout
1. Gate (G): Used for controlling the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on. It connects to the load.
3. Source (S): The terminal that connects to ground or the negative side of the power supply.
The STD12N50M2 features a maximum drain-source voltage (V_DS) of 500V and can handle continuous drain current (I_D) of up to 12A, making it suitable for high-voltage applications.
Manufacturer
Application
Equivalent
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