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STD10NM60N
MOSFET N-CH 600V 10A DPAK
- Fabricante
- Mfr. Parte #STD10NM60N
- Paquete TO-252-3
- Hoja de datos STD10NM60N DataSheet
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 550mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 540 pF @ 50 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Descripción general
Description
Key specifications include a low on-resistance (RDS(on)), which ensures minimal power loss during operation, and a fast switching speed, allowing for efficient performance in high-frequency applications. The device typically comes in a TO-220 package, facilitating easy heat dissipation and integration into circuit designs.
The STD10NM60N is ideal for engineers and designers looking for reliable and efficient components in power electronics, particularly in applications requiring high voltage and current handling capabilities. Its robustness and efficiency make it a popular choice in both industrial and consumer electronics.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 10A, allowing for moderate power handling.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.5Ω at V_GS of 10V, which helps minimize conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient switching.
5. Package Type: It is typically available in a TO-220 package, facilitating easy heat dissipation.
6. Fast Switching Speed: The MOSFET features fast switching characteristics, making it ideal for applications like power supplies and motor control.
7. Thermal Resistance: It has a low thermal resistance, enhancing reliability and performance in thermal management.
These features make the STD10NM60N suitable for various applications, including automotive, industrial, and consumer electronics.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on, enabling current flow between the drain and source.
2. Drain (D) - This pin is the output terminal through which the current flows when the MOSFET is turned on. It connects to the load in a power circuit.
3. Source (S) - This pin is connected to the ground or negative side of the power supply in a typical configuration. It serves as the return path for the current.
The STD10NM60N is designed for high voltage applications, with a maximum voltage rating of 600V and a continuous current rating of 10A. It is commonly used in various power electronics applications, including motor drivers, switch-mode power supplies, and other high-efficiency circuits.
Manufacturer
Application
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