SPB21N50C3

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SPB21N50C3

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  • Mfr. Parte #SPB21N50C3
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Especificaciones

Technology Si
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS C3
Factory Pack Quantity:Factory Pack Quantity 1000
Subcategory Transistors
Part # Aliases SP000013833 SPB21N5C3XT SPB21N50C3ATMA1
Mounting Style SMD/SMT
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 4.4 mm
Length 10 mm
Width 9.25 mm
Unit Weight 0.139332 oz
Package / Case D2PAK-3 (TO-263-3)
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 21 A
Rds On - Drain-Source Resistance 190 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.9 V
Qg - Gate Charge 95 nC
Pd - Power Dissipation 208 W
Channel Mode Enhancement
Fall Time 4.5 ns
Rise Time 5 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 67 ns
Typical Turn-On Delay Time 10 ns
REACH - SVHC Details

Descripción general

Description

The SPB21N50C3 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 21A at a junction temperature of 25°C. Its low on-resistance (R_DS(on)) minimizes conduction losses, making it suitable for inverters, switch-mode power supplies, and industrial power applications.
The SPB21N50C3 is typically housed in a TO-220 package, which facilitates efficient thermal management. It also includes a fast switching speed, allowing for high-frequency operation essential in modern power electronics. The gate threshold voltage (V_GS(th)) is designed to be compatible with standard driving voltages, ensuring ease of integration into various circuits.
Overall, the SPB21N50C3 provides reliability and efficiency for high-voltage applications, making it a popular choice among engineers in the power electronics field.

Features

The SPB21N50C3 is a high-voltage power MOSFET featuring several key specifications:
1. Type: N-channel MOSFET.
2. Voltage Rating: 500 V maximum drain-source voltage (V_DS).
3. Current Rating: Continuous drain current (I_D) of 21 A.
4. R_DS(on): Low on-resistance, typically around 0.45 ohms, enhancing efficiency and reducing heat generation.
5. Gate Threshold Voltage: Typically between 2.0V to 4.0V, enabling compatibility with low-voltage drive circuits.
6. Package: Available in a TO-220 package, facilitating effective thermal management.
7. Switching Speed: Fast switching capabilities, suitable for high-frequency applications.
8. Applications: Ideal for power supplies, motor drives, and inverters.
These features make the SPB21N50C3 suitable for various electronic applications requiring robust performance and reliability in high-voltage environments.

Package

The SPB21N50C3 is typically packaged in a TO-220 form factor. This package type is designed for power devices, providing effective heat dissipation and easy mounting on heat sinks for improved thermal management.

Pinout

The SPB21N50C3 is a power MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing or preventing current flow between the drain and source when voltage is applied.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is where the current enters the MOSFET when it is activated.
The SPB21N50C3 features a voltage rating of 500V and a continuous drain current of 21A, making it suitable for high-voltage applications. It is commonly used in power management, switching applications, and in circuits where efficient control of power is required.

Manufacturer

The SPB21N50C3 is a power MOSFET manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, manufactures, and markets a wide range of semiconductor products, including microcontrollers, sensors, and power management devices, primarily serving automotive, industrial, and consumer markets. The company is known for its innovation in electronics and plays a significant role in the development of smart technologies and solutions.

Application

The SPB21N50C3 is a high-voltage N-channel MOSFET, typically used in applications such as power supplies, motor drives, and lighting control. It is suitable for switching and amplification in high-frequency circuits, as well as in automotive and industrial power management systems. Its high voltage rating makes it ideal for use in AC-DC converters and inverters, enabling efficient energy conversion and control in various electronic devices.

Equivalent

The SPB21N50C3 is a N-channel MOSFET with a 500V, 21A rating. Equivalent products include:
1. STP21N50F3 (STMicroelectronics)
2. IRF210 (Infineon)
3. MTP21N50E (ON Semiconductor)
4. FQP21N50 (Fairchild Semiconductor)
Always verify specifications like R_ds(on) and packaging for compatibility in your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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