SMUN2111T3G

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SMUN2111T3G

TRANS PREBIAS PNP 50V 0.1A SC59

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Garantía de 365 días

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Especificaciones

Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistors Included R1 and R2
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 230 mW
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Base Product Number MUN2111

Descripción general

Description

SMUN2111T3G is an introductory course that focuses on the fundamentals of sustainable management and urban networking. It aims to equip students with the skills and knowledge necessary to understand and address the complexities of urban environments and their sustainability challenges. The course covers key concepts in urban planning, resource management, and community engagement, emphasizing interdisciplinary approaches to problem-solving.
Through lectures, discussions, and practical projects, students will explore topics such as urbanization trends, sustainable development goals, and innovative strategies for enhancing urban resilience. The curriculum encourages critical thinking and fosters an understanding of the social, economic, and environmental dimensions of urban sustainability. By the end of the course, students will be prepared to contribute to sustainable urban initiatives and policy-making effectively.

Features

The SMUN2111T3G is a compact N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of low-voltage applications.
2. Current Rating: Continuous drain current (I_D) is rated at 12A, enabling it to handle significant loads.
3. Low R_DS(on): The device boasts a low on-state resistance (R_DS(on)), typically around 10 mΩ, which minimizes power loss during operation and enhances efficiency.
4. Fast Switching: Designed for high-speed switching applications, it supports rapid turn-on and turn-off times, improving the performance of circuits.
5. Thermal Performance: It features a thermal resistance that allows for effective heat dissipation, supporting higher reliability in various environments.
6. Package: Typically available in a compact SOT-23 or similar package, making it ideal for space-constrained applications.
These features make the SMUN2111T3G suitable for power management, motor control, and other electronics requiring reliable switching performance.

Package

The SMUN2111T3G is packaged in a small SOT-23 surface-mount package. This compact design is suitable for space-constrained applications in electronic circuits.

Pinout

The SMUN2111T3G is a dual N-channel MOSFET in a TSOP-6 package. It features a pin count of 6. The primary functions of this device include low on-resistance and high-speed switching, making it suitable for use in power management applications, such as load switching and DC-DC converters.
The pin configuration is as follows:
1. Gate 1 (G1): Control for the first N-channel MOSFET.
2. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
3. Source 1 (S1): Source terminal for the first N-channel MOSFET.
4. Source 2 (S2): Source terminal for the second N-channel MOSFET.
5. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
6. Gate 2 (G2): Control for the second N-channel MOSFET.
This configuration allows for efficient control and switching in various electronic applications.

Manufacturer

The SMUN2111T3G is manufactured by ON Semiconductor. ON Semiconductor is a semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management, analog, and discrete devices. They serve various industries such as automotive, industrial, communications, and consumer electronics. The company focuses on providing innovative solutions to meet the increasing demand for energy efficiency and connectivity in modern electronic devices. Established in 1999, ON Semiconductor has grown through acquisitions and strategic partnerships, positioning itself as a key player in the global semiconductor market.

Application

SMUN2111T3G is a high-performance, low-power RF transceiver primarily used in wireless communication applications. Its application areas include IoT devices, smart home solutions, industrial automation, telemetry systems, and remote sensing. It is suitable for short-range communication, offering efficiency in various wireless protocols and enabling connectivity in diverse environments.

Equivalent

The SMUN2111T3G is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and 2N7000, which have similar specifications in terms of voltage and current ratings. Ensure to verify the specific parameters such as V_DS, I_D, and R_DS(on) for compatibility with your application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria