SMMBT5551LT1G

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SMMBT5551LT1G

TRANS NPN 160V 0.6A SOT23-3

  • Fabricante
  • Mfr. Parte #SMMBT5551LT1G
  • Paquete SOT23-3
  • Hoja de datos
  • En stock6501

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 600 mA
Voltage-CollectorEmitterBreakdown(Max) 160 V
VceSaturation(Max)@IbIc 200mV @ 5mA, 50mA
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 80 @ 10mA, 5V
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Descripción general

Description

The SMMBT5551LT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. It features a maximum collector current rating of 600 mA and a collector-emitter voltage rating of up to 50 V. With a gain (hFE) ranging from 100 to 600, it is suitable for various electronic circuits, including amplifiers and signal processing.
This transistor is packaged in a small SOT-23 form factor, enabling compact designs for modern electronics. It operates efficiently with a low base-emitter voltage, making it ideal for battery-operated devices. The SMMBT5551LT1G is often utilized in consumer electronics, automotive applications, and industrial controls due to its reliability and ease of use.
In summary, the SMMBT5551LT1G is an efficient, versatile NPN transistor suitable for a wide range of applications, contributing to the performance and miniaturization of electronic devices.

Features

The SMMBT5551LT1G is a general-purpose NPN transistor designed for various switching and amplification applications. Key features include:
1. Type: NPN Bipolar Junction Transistor (BJT).
2. Voltage Rating: Collector-Emitter Voltage (Vce) up to 45V.
3. Current Rating: Maximum Collector Current (Ic) of 600mA.
4. Gain: High DC current gain (hFE) ranging from 100 to 300, ensuring efficient amplification.
5. Package: Available in the SOT-23 surface-mount package, making it suitable for compact circuit designs.
6. Frequency: Transition frequency (fT) of about 250 MHz, allowing for high-speed operation.
7. Thermal Characteristics: Features a high maximum junction temperature of 150°C, enhancing reliability in various environments.
8. Applications: Ideal for low-power switching, signal amplification, and driver circuits.
This combination of specifications makes the SMMBT5551LT1G a versatile choice for electronic design projects.

Package

The SMMBT5551LT1G is packaged in a SOT-23 format, a small surface-mount device package commonly used for transistors.

Pinout

The SMMBT5551LT1G is a NPN bipolar junction transistor (BJT) in a surface-mount package, specifically the SOT-23 package. It has three pins, which serve the following functions:
1. Collector (C): Pin 1 - This is the terminal through which the current flows out of the transistor. It connects to the load or power supply.
2. Base (B): Pin 2 - This is the control terminal that modulates the current flowing from the collector to the emitter. A small current input to this pin allows larger currents to flow from the collector to the emitter.
3. Emitter (E): Pin 3 - This terminal is where the current exits the transistor, returning to the common ground.
The SMMBT5551LT1G is commonly used for switching and amplification purposes in various electronic circuits.

Manufacturer

The SMMBT5551LT1G is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor designs and manufactures a wide range of products, including discrete, logic, analog, and mixed-signal components. The company serves various markets such as automotive, industrial, cloud computing, and consumer electronics. ON Semiconductor focuses on energy-efficient technologies and provides innovative solutions to help customers meet their design challenges and reduce their environmental impact.

Application

The SMMBT5551LT1G is a general-purpose NPN transistor used in various applications, including amplification, switching, and signal processing in electronic circuits. It is suitable for low-power tasks in consumer electronics, automotive applications, and industrial equipment. Its compact size makes it ideal for PCB designs in compact devices.

Equivalent

The SMMBT5551LT1G is a NPN transistor used in general-purpose switching and amplification applications. Equivalent products include:
1. MMBT5551
2. 2N5551
3. BC547
4. 2N3904
Always check the specific datasheets for electrical characteristics and package compatibility before substituting.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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