SMMBT3906LT1G

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SMMBT3906LT1G

TRANS PNP 40V 0.2A SOT23-3

  • Fabricante
  • Mfr. Parte #SMMBT3906LT1G
  • Paquete SOT-23-3
  • Hoja de datos
  • En stock6677

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 200 mA
Voltage-CollectorEmitterBreakdown(Max) 40 V
VceSaturation(Max)@IbIc 400mV @ 5mA, 50mA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 10mA, 1V
Power-Max 300 mW
Frequency-Transition 250MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Descripción general

Description

SMMBT3906LT1G is a part number for a specific N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in electronic circuits for switching and amplification purposes. This component is characterized by its low on-resistance, which enhances efficiency and reduces heat generation during operation. It operates at high speeds, making it suitable for applications in power management, motor control, and other electronic devices requiring efficient switching.
The "LT" in the part number often indicates a low threshold voltage, which allows it to be driven by lower gate voltages, enhancing its versatility in various designs. The package type and thermal characteristics, crucial for circuit design, are also specified in the complete datasheet for this component. Designers utilize SMMBT3906LT1G in applications ranging from consumer electronics to industrial systems, where reliability and performance are paramount. Always refer to the manufacturer's datasheet for detailed specifications, electrical characteristics, and recommended operating conditions.

Features

The SMMBT3906LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
1. Type: PNP, suitable for low-side switching.
2. Package: Surface Mount (SOT-23), ideal for space-constrained applications.
3. Voltage Rating: Maximum collector-emitter voltage (Vce) of 40V.
4. Current Rating: Maximum collector current (Ic) of 200mA.
5. Power Dissipation: Up to 250mW, allowing for effective heat management in typical applications.
6. Transition Frequency: High frequency (fT) of 300MHz, enabling fast switching capabilities.
7. Gain: High current gain (hFE) range of 100 to 300, providing efficient signal amplification.
8. Temperature Range: Operating temperature from -55°C to +150°C, suitable for a wide range of environments.
These features make the SMMBT3906LT1G suitable for various electronic applications, including signal processing, amplification, and small-signal switching.

Package

The SMMBT3906LT1G is typically packaged in a SOT-23 package type. This surface-mount package is compact and suitable for various electronic applications, enabling efficient use of space on printed circuit boards.

Pinout

The SMMBT3906LT1G is a PNP bipolar junction transistor (BJT) with a total of three pins. The pin configuration is as follows:
1. Emitter (E) - This pin is connected to the emitter terminal of the transistor.
2. Base (B) - This pin serves as the base terminal, where the input signal is applied to control the transistor's operation.
3. Collector (C) - This pin connects to the collector terminal, where the output current flows.
The SMMBT3906LT1G is commonly used in general-purpose amplification and switching applications. It is designed for low-power applications and is housed in a small SOT-23 package, making it suitable for compact designs. The transistor can handle a collector current of up to 200 mA and has a maximum collector-emitter voltage of 40 V.

Manufacturer

The SMMBT3906LT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including analog, discrete, and power management devices. The company focuses on providing energy-efficient solutions and serves various markets, including automotive, industrial, consumer, and communications. Founded in 1999, ON Semiconductor has grown through a series of acquisitions and is recognized for its commitment to innovation and sustainability in the semiconductor industry.

Application

The SMMBT3906LT1G is a PNP bipolar junction transistor (BJT) commonly used in low-power switching and amplification applications. It is suitable for signal amplification in audio and RF circuits, as well as in general-purpose electronic devices. Its compact size makes it ideal for use in consumer electronics, automotive applications, and portable devices. Additionally, it is often utilized in voltage regulation and control circuits.

Equivalent

The SMMBT3906LT1G is a PNP bipolar junction transistor. Equivalent products include:
1. 2N2907
2. BC558
3. MMBT3906
4. 2N5088
These alternatives may vary in specifications, so it's essential to check datasheets for specific characteristics like current rating and voltage.

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