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SIRA14BDP-T1-GE3
MOSFET N-CH 30V 21A/64A PPAK SO8
- Fabricante
- Mfr. Parte #SIRA14BDP-T1-GE3
- Paquete PowerPAK-SO-8
- Hoja de datos SIRA14BDP-T1-GE3 DataSheet
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen IV |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Ta), 64A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 5.38mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22 nC @ 10 V |
| Vgs(Max) | +20V, -16V |
| InputCapacitance(Ciss)(Max)@Vds | 917 pF @ 15 V |
| PowerDissipation(Max) | 3.7W (Ta), 36W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
Descripción general
Description
Such devices often incorporate elements like high-speed data transfer, compatibility with various protocols, and integrated solutions for data handling. They are designed to meet the demands of modern infrastructure, ensuring seamless connectivity and efficient operation within a networked environment.
Applications may range from smart city solutions, IoT frameworks, to advanced industrial automation systems. The "T1" and "GE3" suffixes could indicate specific configurations or enhancements in processing power or connectivity options, tailored to particular use cases or industry standards.
For detailed specifications and applications, consulting the manufacturer's documentation is recommended.
Features
1. Voltage Rating: It typically supports high voltages, making it suitable for demanding applications.
2. Low On-Resistance: This minimizes power losses during operation, enhancing efficiency.
3. Fast Switching Speed: It allows for rapid switching, which is beneficial in high-frequency applications.
4. High Current Rating: Capable of handling substantial current loads, ensuring reliability in power applications.
5. Thermal Performance: Designed to operate efficiently at elevated temperatures, with good thermal conductivity.
6. Package Type: Often available in compact packages, facilitating easy integration into various circuit designs.
These features make the SIRA14BDP-T1-GE3 ideal for use in power supplies, motor drivers, and other electronic applications requiring efficient power management. Always consult the datasheet for specific electrical characteristics and ratings.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The terminal connected to the ground or supply voltage.
This device is designed for various applications, including power management, switching, and amplifying signals in electronic circuits. It features low on-resistance and fast switching capabilities, making it suitable for efficient power conversion and control.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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