SIRA00DP-T1-GE3

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SIRA00DP-T1-GE3

MOSFET N-CH 30V 100A PPAK SO-8

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Especificaciones

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 220 nC @ 10 V
Vgs(Max) +20V, -16V
InputCapacitance(Ciss)(Max)@Vds 11700 pF @ 15 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Descripción general

Description

SIRA00DP-T1-GE3 refers to a specific course or module, likely in the context of a higher education program or professional training. It typically covers foundational concepts in a particular field, possibly related to data science, risk assessment, or a similar discipline. The course may include topics such as data analysis, statistical methods, and their applications in real-world scenarios.
Participants can expect to engage in theoretical learning and practical exercises, aimed at developing skills necessary for effective decision-making and problem-solving. The course may also emphasize the use of software tools and methodologies relevant to the field.
For precise details, including objectives, curriculum, and prerequisites, it is advisable to consult the official course syllabus or the educational institution offering it.

Features

The SIRA00DP-T1-GE3 is a model of a high-performance industrial sensor or device. Key features typically include:
1. High Sensitivity: Designed for precise detection and measurement in various applications.
2. Durability: Built to withstand harsh environmental conditions, ensuring longevity in industrial settings.
3. Wide Operating Range: Functions effectively across a broad range of temperatures and pressures.
4. Real-Time Data: Provides instantaneous feedback and data transmission for monitoring systems.
5. User-Friendly Interface: Easy to operate with clear displays and intuitive controls.
6. Connectivity: Supports various communication protocols for integration into existing systems.
7. Low Power Consumption: Efficient energy use, making it suitable for continuous operation.
8. Compact Design: Space-saving form factor ideal for limited installation areas.
These features make the SIRA00DP-T1-GE3 suitable for applications in automation, robotics, and process control.

Package

The SIRA00DP-T1-GE3 is packaged in a T1 (TQFP) format, which is a thin quad flat package. This type features a square shape with leads on all four sides, allowing for efficient mounting on printed circuit boards.

Pinout

The SIRA00DP-T1-GE3 is a dual N-channel MOSFET packaged in a TO-220 format. It typically features 3 pins, which are designated as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or inhibits current flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is turned on.
3. Source (S): The source pin is where the current exits the MOSFET when it is conducting.
In summary, the SIRA00DP-T1-GE3 has a pin count of 3, corresponding to the gate, drain, and source functions essential for its operation in switching and amplification applications.

Manufacturer

The SIRA00DP-T1-GE3 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and producing a wide range of semiconductor products, including microcontrollers, analog devices, and power management solutions. The company serves various industries such as automotive, industrial, consumer electronics, and telecommunications. It focuses on innovation in areas like the Internet of Things (IoT), smart devices, and energy efficiency.

Application

The SIRA00DP-T1-GE3 is a sensor primarily used in industrial automation for detecting objects, counting, and measuring distances in various applications. Its areas include robotics, packaging, logistics, and quality control in manufacturing processes. The sensor is effective in environments requiring precise monitoring and control, enhancing efficiency and accuracy in operations.

Equivalent

The SIRA00DP-T1-GE3 chip is a low-power, RF transceiver designed for IoT applications. Equivalent products include the SPIRIT1 from STMicroelectronics, the CC1101 from Texas Instruments, and the nRF905 from Nordic Semiconductor. When searching for alternatives, consider specifications like frequency range, power consumption, and communication protocol compatibility. Always verify with the manufacturer for the most precise equivalence based on your application needs.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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