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SIR876ADP-T1-GE3
MOSFET N-CH 100V 40A PPAK SO-8
- Fabricante
- Mfr. Parte #SIR876ADP-T1-GE3
- Paquete
- Hoja de datos SIR876ADP-T1-GE3 DataSheet
- En stock21248
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Especificaciones
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 40A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 10.8mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 49 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1630 pF @ 50 V |
| PowerDissipation(Max) | 5W (Ta), 62.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
Descripción general
Description
Key specifications include its voltage and current ratings, which define its operational limits, as well as its thermal characteristics that ensure reliability under different operating conditions. The SIR876ADP-T1-GE3 is often favored in consumer electronics, automotive, and industrial applications due to its robustness and efficiency.
Overall, this MOSFET contributes to the enhancement of energy efficiency in electronic designs, supporting the trend towards miniaturization and improved performance in modern devices.
Features
1. Voltage Rating: It typically supports high voltage levels, making it suitable for various applications.
2. RDS(on): Low on-resistance ensures minimal conduction losses and enhances thermal performance.
3. Current Rating: Capable of handling high continuous drain current, suitable for demanding applications.
4. Package Type: Housed in a compact surface-mount package for easy integration into PCB designs.
5. Fast Switching Speed: Enables efficient operation in switching applications, reducing loss and heat generation.
6. Thermal Performance: Designed to dissipate heat effectively, enhancing reliability and longevity.
7. Gate Threshold Voltage: Optimized for low voltage drive, making it compatible with various control circuits.
This MOSFET is ideal for applications such as power supplies, motor drives, and DC-DC converters, where efficiency and reliability are paramount.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the current flows out.
3. Source (S) - The terminal through which current enters the MOSFET.
The remaining pins are typically used for additional features such as thermal management or to enhance the device's performance in specific applications, depending on the package type. The SIR876ADP-T1-GE3 is known for its low on-resistance and fast switching characteristics, making it suitable for high-efficiency designs.
For detailed specifications, it's advisable to refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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