SIR871DP-T1-GE3

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SIR871DP-T1-GE3

MOSFET P-CH 100V 48A PPAK SO-8

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 48A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 20mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.6V @ 250µA
GateCharge(Qg)(Max)@Vgs 90 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3395 pF @ 50 V
PowerDissipation(Max) 89W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Descripción general

Description

The SIR871DP-T1-GE3 is a high-performance, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features low on-resistance, which minimizes power loss and heat generation, making it ideal for use in various electronic circuits such as DC-DC converters, motor drivers, and power supplies.
With a maximum drain-source voltage of 30V and a continuous drain current rating of up to 62A, the SIR871DP-T1-GE3 is suitable for handling substantial loads. Its fast switching capabilities enable quick responses in high-frequency applications, enhancing overall system efficiency. The device is housed in a TO-263 package, facilitating easy mounting and thermal management.
Additionally, the SIR871DP-T1-GE3 is designed to meet stringent reliability and performance standards, making it a favored choice among engineers for modern electronic designs that require robust and efficient power solutions.

Features

The SIR871DP-T1-GE3 is a high-performance, dual-channel, low-side MOSFET driver designed for efficient driving of power MOSFETs in various applications. Key features include:
1. Dual-Channel Output: Enables control of two MOSFETs, ideal for half-bridge configurations.
2. High Speed: Capable of driving MOSFETs with fast rise and fall times, enhancing switching efficiency.
3. Wide Supply Voltage Range: Supports a broad input voltage range, making it versatile for different applications.
4. Low Quiescent Current: Reduces power consumption in idle states.
5. Built-in Bootstrap Functionality: Facilitates high-side switching, enhancing design flexibility.
6. Thermal Protection: Includes features to protect against overheating, ensuring reliability in demanding environments.
7. Compact Package: Offered in a small footprint, suitable for space-constrained applications.
This driver is commonly used in power management, motor control, and automotive applications, providing robust performance and reliability.

Package

The SIR871DP-T1-GE3 is packaged in a DPAK (TO-252) type, which is a surface-mount package designed for power devices, providing efficient thermal performance and compact size.

Pinout

The SIR871DP-T1-GE3 is a Power MOSFET with a total of 6 pins. Its main functions include:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which current flows out when the device is on.
3. Source (S): The terminal through which current enters when the device is on.
The pin configuration typically follows the standard layout for dual MOSFETs, with pins designated for gate control and the drain/source connections. It's used in various applications for switching and amplification in power management systems.

Manufacturer

The SIR871DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in the design and manufacturing of a wide range of electronic components, including resistors, capacitors, inductors, diodes, and transistors. Founded in 1962, the company serves various sectors, including industrial, automotive, consumer electronics, and telecommunications. Vishay is known for its innovation and high-quality products, catering to the needs of engineers and designers in electronic applications. The SIR871DP-T1-GE3 is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various power management applications.

Application

The SIR871DP-T1-GE3 is a dual N-channel MOSFET designed for power management applications. Its key application areas include DC-DC converters, power supply circuits, and battery management systems. It is also suitable for load switching, motor control, and other high-efficiency power conversion tasks in consumer electronics, telecommunications, and industrial equipment.

Equivalent

The SIR871DP-T1-GE3 is a dual N-channel MOSFET driver. Equivalent products include the MIC4426, TC4420, and IRF7101. However, for precise applications, it’s essential to check the specifications such as voltage, current rating, and packaging to ensure compatibility. Always refer to the manufacturer's datasheets for the most accurate comparisons.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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