SIA447DJ-T1-GE3

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SIA447DJ-T1-GE3

MOSFET P-CH 12V 12A PPAK SC70-6

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Especificaciones

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 12 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.5V, 4.5V
RdsOn(Max)@IdVgs 13.5mOhm @ 7A, 4.5V
Vgs(th)(Max)@Id 850mV @ 250µA
GateCharge(Qg)(Max)@Vgs 80 nC @ 8 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 2880 pF @ 6 V
PowerDissipation(Max) 19W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SC-70-6

Descripción general

Description

The SIA447DJ-T1-GE3 is a N-channel MOSFET designed for high-efficiency switching applications. It features a low on-resistance (RDS(on)), enabling reduced power loss and improved thermal performance. This component is suitable for use in various applications, including power management, motor control, and DC-DC converters.
Key specifications typically include a maximum drain-source voltage (VDS), high current handling capability, and fast switching speeds, making it ideal for both consumer electronics and industrial applications. The package is often designed for easy integration into circuit boards.
In summary, the SIA447DJ-T1-GE3 is an effective choice for engineers looking to enhance power efficiency and reliability in their designs.

Features

The SIA447DJ-T1-GE3 is an N-channel MOSFET designed for various applications, particularly in power management. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Capability: It has a continuous drain current (Id) rating of up to 55A, which allows for efficient power handling.
3. Rds(on): The on-state resistance is low (around 10mΩ), ensuring minimal power loss and improved efficiency during operation.
4. Fast Switching: Designed for quick turn-on and turn-off times, making it ideal for high-frequency applications.
5. Thermal Performance: Offers good thermal stability with a junction temperature range of -55°C to +150°C.
6. Package: Available in a TO-220 package, providing ease of heat dissipation.
7. Applications: Commonly used in power supplies, motor drivers, and automotive applications.
These features make the SIA447DJ-T1-GE3 a versatile choice for modern electronic designs.

Package

The SIA447DJ-T1-GE3 is packaged in a TO-220 package type. This package is commonly used for power transistors, providing efficient thermal management and suitable for high-power applications.

Pinout

The SIA447DJ-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Here are the pin functions:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The main current-carrying terminal where the load is connected.
3. Source (S): The terminal through which the current exits the MOSFET.
4. Gate (G): Another gate connection for potential parallel configurations.
5. Drain (D): Another drain connection for parallel configurations.
6. Source (S): Another source connection for parallel configurations.
7. Body Diode (D): Internal body diode that provides protection and allows current flow in the reverse direction.
8. NC (No Connection): Not connected to any internal circuitry, usually reserved for future use or for layout flexibility.
This device is commonly used in power management applications due to its high efficiency and low on-resistance.

Manufacturer

The SIA447DJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, it operates in various sectors, including automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its innovation and extensive product portfolio, which includes MOSFETs, diodes, resistors, capacitors, and more, catering to the needs of a wide range of applications in the electronics industry.

Application

The SIA447DJ-T1-GE3 is a N-channel MOSFET used in various applications, including power management, switching power supplies, motor control, and load management. Its features make it suitable for high-efficiency power conversion, automotive electronics, and consumer electronics where compact size and high performance are crucial.

Equivalent

The SIA447DJ-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF3205, IRL540, and STP16NF06. Always verify specifications like voltage, current rating, and package type to ensure compatibility for your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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2. Tarjeta de crédito/débito

3. Transferencia bancaria

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