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SI9926CDY-T1-GE3
MOSFET 2N-CH 20V 8A 8-SOIC
- Fabricante
- Mfr. Parte #SI9926CDY-T1-GE3
- Paquete 8-SOIC (0.154, 3.90mm Width)
- Hoja de datos SI9926CDY-T1-GE3 DataSheet
- En stock8061
100% original & Nuevo
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Garantía de 365 días
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Especificaciones
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 8A |
| RdsOn(Max)@IdVgs | 18mOhm @ 8.3A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1200pF @ 10V |
| Power-Max | 3.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Descripción general
Description
Key features include low propagation delay, adjustable rise and fall times, and a built-in under-voltage lockout (UVLO) function for enhanced reliability. The device is packaged in a compact surface-mount format, facilitating easy integration into space-constrained designs. Additionally, its robust thermal performance ensures reliable operation under demanding conditions.
The SI9926CDY-T1-GE3 is ideal for applications requiring efficient power conversion and precise control of MOSFETs, contributing to overall system efficiency and reliability.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents of up to 6.6A, which can be higher with proper thermal management.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 12.5 mΩ at V_GS = 10V, enhancing efficiency by reducing power loss during operation.
4. Fast Switching: Optimized for quick switching applications, reducing transition losses in high-frequency applications.
5. Thermal Performance: Enhanced thermal stability with a maximum junction temperature of 150°C, ensuring reliability in demanding environments.
6. Package: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the SI9926CDY-T1-GE3 suitable for use in various electronic devices, including power supplies, motor drivers, and LED drivers.
Package
Pinout
The pin functions are as follows:
1. GND: Ground reference for the device.
2. VDD: Supply voltage input for the driver.
3. IN1: Input signal for channel 1 to control the gate of the MOSFET.
4. OUT1: Output to drive the gate of the MOSFET for channel 1.
5. IN2: Input signal for channel 2 to control the gate of another MOSFET.
6. OUT2: Output to drive the gate of the MOSFET for channel 2.
7. NC: No connect; not used and should be left open.
8. NC: Another No connect; not used and should also be left open.
The SI9926CDY-T1-GE3 is suitable for applications requiring efficient gate driving for power MOSFETs in various power management circuits.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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