SI7489DP-T1-E3

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SI7489DP-T1-E3

MOSFET P-CH 100V 28A PPAK SO-8

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Especificaciones

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 41mOhm @ 7.8A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 160 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4600 pF @ 50 V
PowerDissipation(Max) 5.2W (Ta), 83W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Descripción general

Description

The SI7489DP-T1-E3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Silicon Labs. It is designed for efficient power management in various electronic applications, including DC-DC converters, motor drives, and load switching.
Key features of the SI7489DP-T1-E3 include a low on-resistance (RDS(on)), which minimizes power loss during operation, and a high breakdown voltage, ensuring reliable performance under varying conditions. Its compact surface-mount package (SO-8) makes it suitable for space-constrained designs.
The device typically supports a wide range of gate voltages, allowing for compatibility with different control circuitry. The SI7489DP-T1-E3 is favored for applications requiring high efficiency and reliability, such as consumer electronics and industrial systems.
Overall, this MOSFET represents a solid choice for designers seeking effective solutions for modern power management challenges.

Features

The SI7489DP-T1-E3 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V.
2. Continuous Current: It can handle a continuous drain current (ID) of up to 30A.
3. Low RDS(on): The device offers a low on-resistance of approximately 10 mΩ at a gate-source voltage (VGS) of 10V, which enhances efficiency.
4. Fast Switching: The MOSFET is capable of fast switching speeds, making it suitable for various applications like DC-DC converters and motor control.
5. Thermal Performance: It has a high thermal stability with a maximum junction temperature of 150°C.
6. Package Type: It comes in a compact SO-8 package, facilitating efficient space utilization on PCBs.
Overall, the SI7489DP-T1-E3 is suitable for applications requiring efficient power management and compact design.

Package

The SI7489DP-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) type package. This surface-mount package features eight pins and is commonly used for integrated circuits, allowing efficient mounting on circuit boards.

Pinout

The SI7489DP-T1-E3 is a dual N-channel MOSFET in a 6-pin DFN package. It features a pin count of 6. The primary functions of the SI7489DP-T1-E3 include:
1. Control of Power Management: It is commonly used in power management applications such as DC-DC converters and synchronous rectification.

2. Switching Applications: The MOSFETs can switch on and off rapidly, making them suitable for applications requiring efficient power conversion.
The pin configuration is as follows:
1. Gate1: Control for NMOS1
2. Drain1: Drain for NMOS1
3. Source1: Source for NMOS1
4. Gate2: Control for NMOS2
5. Drain2: Drain for NMOS2
6. Source2: Source for NMOS2
Overall, the SI7489DP-T1-E3 is designed for high efficiency in compact power management solutions.

Manufacturer

The SI7489DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, Vishay operates in various sectors including automotive, industrial, consumer electronics, and telecommunications. The company is known for its high-quality components such as diodes, capacitors, resistors, and MOSFETs, which are integral to modern electronic devices. Vishay emphasizes innovation and reliability, serving a broad range of industries worldwide.

Application

The SI7489DP-T1-E3 is a dual N-channel MOSFET used in various applications, including power management, load switching, DC-DC converters, and motor control. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies and battery-powered devices. Additionally, it's often found in consumer electronics, automotive systems, and industrial automation for reliable high-speed switching operations.

Equivalent

The SI7489DP-T1-E3 is a dual N-channel MOSFET. Equivalent products include the BSS138, IRLML2502, and AO3400. However, cross-referencing datasheets is essential to ensure similar specifications like voltage, current ratings, and R_DS(on) values. Always verify compatibility for your specific application.

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