SI7460DP-T1-GE3

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SI7460DP-T1-GE3

MOSFET N-CH 60V 11A PPAK SO-8

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Especificaciones

Series TrenchFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SI7460

Descripción general

Description

The SI7460DP-T1-GE3 is a dual N-channel MOSFET designed for efficient power management applications. Manufactured by Vishay, this MOSFET features a low on-resistance (RDS(on)), which enables effective conduction with minimal power loss. It has a maximum drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of up to 50A, making it suitable for various applications, including power supply circuits, motor drives, and DC-DC converters.
The device is housed in a compact SO-8 package, allowing for efficient thermal management and space-saving designs. Its fast switching capabilities make it ideal for high-frequency applications, contributing to improved efficiency in power conversion systems. Additionally, the Si7460DP-T1-GE3 is compliant with RoHS standards, ensuring it is environmentally friendly. Overall, this MOSFET is a reliable choice for engineers looking to enhance the performance of their electronic designs.

Features

The SI7460DP-T1-GE3 is an N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 40A, allowing for robust performance in demanding environments.
3. R_DS(on): It offers a low on-resistance of approximately 9.5 mΩ at V_GS = 10V, which minimizes conduction losses.
4. Fast Switching: Its fast switching capabilities enable efficient operation in high-frequency applications.
5. Package: The MOSFET comes in a DPAK package, facilitating easier thermal management and PCB layout.
6. Thermal Resistance: It has a low thermal resistance, enhancing its thermal performance.
These features make the SI7460DP-T1-GE3 ideal for applications in motor drives, power supplies, and other power conversion circuits.

Package

The SI7460DP-T1-GE3 is packaged in a DPAK (also known as TO-252) format. This surface-mount package is designed for efficient thermal performance and compactness in electronic applications.

Pinout

The SI7460DP-T1-GE3 is a N-channel MOSFET with a pin count of 8. The device is designed for use in various switching applications, featuring low on-resistance and high-speed switching capabilities.
The function of each pin is as follows:
1. Gate (G): Controls the MOSFET operation; a voltage applied here turns the device on or off.
2. Source (S): Connects to the source terminal of the MOSFET; typically tied to the ground in low-side switching configurations.
3. Drain (D): The output terminal where the load connects; current flows from the drain to the source when the device is on.
4. Thermal Pad (TP): Used for heat dissipation; connects to the PCB for improved thermal management.
The device is particularly suited for applications in power management, load switching, and motor control due to its efficiency and performance characteristics.

Manufacturer

The SI7460DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent global manufacturer specializing in discrete semiconductors and passive electronic components. The company provides a wide range of products, including diodes, capacitors, resistors, and MOSFETs, which are essential in various electronic applications. Founded in 1962, Vishay serves diverse markets such as automotive, industrial, computing, consumer electronics, and telecommunications, focusing on innovation and quality in electronic components.

Application

The SI7460DP-T1-GE3 is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, load switches, and motor control. Its low on-resistance and high-speed switching capabilities make it suitable for use in battery-powered devices, telecom equipment, and industrial automation systems. Additionally, it can be employed in high-efficiency power supplies and various consumer electronic devices.

Equivalent

The SI7460DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the following:
1. BSS138
2. IRF520
3. AO3401
4. SI7465DP-T1-GE3
Always verify specifications such as voltage, current ratings, and R_DS(on) to ensure compatibility for your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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