SI7439DP-T1-GE3

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SI7439DP-T1-GE3

MOSFET P-CH 150V 3A PPAK SO-8

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  • Mfr. Parte #SI7439DP-T1-GE3
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Especificaciones

Series TrenchFET®
Part Status Active
Base Product Number SI7439
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package PowerPAK® SO-8
Packaging Cut Tape (CT), Tape & Reel (TR)

Descripción general

Description

SI7439DP-T1-GE3 is a dual MOSFET device from Vishay Siliconix (Si7439 family). It contains two MOSFETs in a single package, intended for power-switching tasks such as high-side switches, reverse-current protection, and other power-management circuits in portable electronics. The T1-GE3 suffix indicates a specific tape-and-reel, RoHS-compliant packaging variant.
Key points:
- Dual MOSFET in one package (used to save board space and simplify routing).
- Designed for low-loss high-side/low-side switching in DC supplies and battery-powered apps.
- Each transistor provides typical features of MOSFETs: low on-resistance, fast switching, body diode, and reasonable gate-drive requirements.
- Exact electrical ratings (Vds, Id, Rds(on), Qg) and pinout depend on the specific variant; consult the official datasheet for precise values and thermal characteristics.
If you’re selecting it for a design, verify the Vds, Id, Rds(on), package detail, and thermal considerations in the datasheet.

Features

- Dual N-channel enhancement-mode MOSFETs in a single DPak (TO-252-3) package
- VDS rating typically around 30 V
- High-current capability per FET (several amperes)
- Low RDS(on) and low gate charge for efficient switching
- Logic-level gate drive suitable
- Fast switching with trench technology
- Avalanche-rated / rugged for switching applications
- Pb-free, RoHS compliant; available in tape-and-reel GE3 material
Note: exact electrical values (VDS, ID, RDS(on), etc.) vary by lot; consult the latest datasheet for precise numbers.

Package

Si7439DP-T1-GE3 uses a D-Pak (TO-252) surface-mount package.

Pinout

- Pin count: 6 pins
- Function: Dual N-channel Power MOSFET in one package (two MOSFETs in a single package for high-current switching).

Manufacturer

- Manufacturer: Vishay Intertechnology, Inc. (Vishay Siliconix)
- Company type: Global manufacturer of electronic components and semiconductors (discrete devices, passives, and related components).

Application

Si7439DP-T1-GE3 is a dual N-channel power MOSFET. It’s used for high-speed switching in power-management circuits. Common applications: synchronous buck/boost DC-DC converters and half-bridge circuits; load switches and power-rail protection; motor-driver circuits; automotive and industrial power management; portable/battery-powered devices.

Equivalent

Exact equivalents depend on the device specs (Vds, Id, Rds(on), packaging). SI7439DP-T1-GE3 is a Vishay MOSFET in a DPAK lead-free package. For cross-references, use distributor tools (Digi-Key, Mouser) or share the key specs and I’ll suggest exact equivalents from Infineon, ON Semiconductor, ST, etc.

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