SI7439DP-T1-E3

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SI7439DP-T1-E3

MOSFET P-CH 150V 3A PPAK SO-8

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Especificaciones

Series TrenchFET®
Part Status Active
Base Product Number SI7439
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package PowerPAK® SO-8
Packaging Cut Tape (CT), Tape & Reel (TR)

Descripción general

Description

The SI7439DP-T1-E3 is a N-channel MOSFET designed for high-speed switching applications. Featuring low on-resistance (R_DS(on)), it offers efficient performance in power management and switching applications. Its maximum drain-source voltage (V_DS) is typically around 30V, with a continuous drain current (I_D) rating that supports significant load handling. The device is housed in a compact surface mount package, which aids in space-saving designs and thermal management.
Common applications include DC-DC converters, motor drivers, and power management systems in consumer electronics, automotive, and industrial sectors. Its fast switching speed and robust performance make it suitable for applications requiring high efficiency and reliability. Overall, the SI7439DP-T1-E3 is an effective choice for engineers looking for dependable MOSFET solutions in various electronic designs.

Features

The SI7439DP-T1-E3 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Low On-Resistance: It offers a low R_DS(on), which minimizes conduction losses, enhancing overall efficiency.
2. High Voltage Rating: The device can handle drain-source voltages up to 30V, making it suitable for various applications.
3. Fast Switching Speed: It supports fast switching, beneficial for high-frequency applications.
4. Compact Package: Housed in a PowerPAK SO-8 package, it provides a small footprint, ideal for space-constrained designs.
5. Thermal Performance: The MOSFET has good thermal characteristics, allowing it to operate effectively under demanding conditions.
6. Low Gate Charge: This feature ensures reduced drive power requirements, leading to improved system efficiency.
Overall, the SI7439DP-T1-E3 is well-suited for power management, DC-DC converters, and other applications requiring robust performance in compact designs.

Package

The SI7439DP-T1-E3 is packaged in a TO-220 format. This package type is commonly used for power transistors and provides good thermal performance and ease of mounting.

Pinout

The SI7439DP-T1-E3 is a N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects to the load; current flows out from the drain when the MOSFET is on.
3. Source (S): Connects to ground or the negative side of the circuit; current enters the source when the MOSFET is on.
The device is designed for low-voltage applications, featuring a low on-resistance and fast switching capabilities, making it suitable for power management and other high-efficiency applications. The SI7439DP-T1-E3 is often used in power supply circuits, load switching, and other applications requiring efficient control of electrical power.

Manufacturer

The manufacturer of the SI7439DP-T1-E3 is Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962, the company provides a wide range of products, including resistors, capacitors, inductors, diodes, and other semiconductor devices, serving various industries such as automotive, consumer electronics, industrial, and telecommunications. Vishay is recognized for its commitment to quality, innovation, and customer service in the electronics market.

Application

The SI7439DP-T1-E3 is a N-channel MOSFET used in various applications, including power management, motor control, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supply circuits, automotive applications, and portable electronics. Additionally, it is utilized in switching regulators and load switching for efficient energy use in consumer and industrial devices.

Equivalent

The SI7439DP-T1-E3 is a N-channel MOSFET. Equivalent products include the BSS138, IRF540, and BS170, though specifications may vary. For a precise replacement, check parameters like voltage, current rating, gate threshold voltage, and on-resistance. Always consult datasheets for compatibility in your specific application.

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