SI7415DN-T1-GE3

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SI7415DN-T1-GE3

MOSFET P-CH 60V 3.6A PPAK1212-8

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 3.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 65mOhm @ 5.7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Descripción general

Description

The SI7415DN-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. It features a low on-resistance (RDS(on)) of 10 mΩ, which minimizes power loss and heat generation during operation, making it suitable for high-efficiency designs. With a maximum continuous drain current of 60A and a gate threshold voltage ranging from 1V to 2.5V, it can be easily driven by low-voltage signals.
This MOSFET is commonly used in applications such as DC-DC converters, power management systems, and motor control. It also has a maximum drain-source voltage (VDS) of 30V, providing enough headroom for various applications.
The device is housed in a compact SO-8 package, allowing for space-efficient designs and effective thermal performance. Its robust performance characteristics and versatility make the SI7415DN-T1-GE3 a popular choice in the electronics industry for power switching and control applications.

Features

The SI7415DN-T1-GE3 is a N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 30V.
2. Current Rating: Continuous drain current (Id) of up to 15A at 25°C.
3. RDS(on): Low on-resistance typically around 10 mΩ, which enhances efficiency and minimizes heat generation.
4. Gate Threshold Voltage (Vgs(th)): Typically between 1.5V to 3V, allowing for effective drive capability with low-voltage logic.
5. Fast Switching: Suitable for high-speed switching applications, improving performance in power converters.
6. Package Type: Available in a compact SO-8 package, facilitating space-saving designs.
7. Thermal Resistance: Low thermal resistance ensures efficient heat dissipation.
These features make the SI7415DN-T1-GE3 suitable for various applications, including DC-DC converters, load switching, and power management in consumer electronics.

Package

The SI7415DN-T1-GE3 is packaged in a SO-8 (Small Outline 8) package type. This surface-mount package features eight pins and is designed for compact applications, providing efficient thermal performance and easy integration onto printed circuit boards.

Pinout

The SI7415DN-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in various electronic circuits. The pin configuration is as follows:
1. G - Gate: Controls the MOSFET's on/off state.
2. D - Drain: The terminal through which current flows out.
3. S - Source: The terminal through which current enters the device.
4. D1 - Drain: Additional drain connection.
5. S1 - Source: Additional source connection.
6. G1 - Gate: Additional gate connection.
7. G2 - Gate: Another gate connection for enhanced control.
8. D2 - Drain: Another drain connection for parallel configurations.
This device is designed for high-speed switching applications and is often used in power management, motor control, and DC-DC converters. It features low on-resistance and fast switching capabilities, making it suitable for efficient power applications.

Manufacturer

The SI7415DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including diodes, transistors, capacitors, resistors, and inductors, serving various industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its innovation and high-quality components, which are essential for modern electronic systems.

Application

The SI7415DN-T1-GE3 is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power supply circuits, motor drives, and load switching. It is also suitable for use in battery management systems and energy-efficient devices due to its low RDS(on) and fast switching capabilities, enhancing efficiency and thermal performance.

Equivalent

Equivalent products for the SI7415DN-T1-GE3 chip, a N-channel MOSFET, include the IRF530, BSS138, and FQP30N06L. Other alternatives may be the STP16NF06, AO3400, and NTD2955N. Ensure to compare specifications like voltage, current, and R_DS(on) for compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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