SI7326DN-T1-GE3

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SI7326DN-T1-GE3

MOSFET N-CH 30V 6.5A PPAK 1212-8

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  • Mfr. Parte #SI7326DN-T1-GE3
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Especificaciones

Series TrenchFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
Vgs (Max) ±25V
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SI7326

Descripción general

Description

The SI7326DN-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in various applications. It is manufactured by Vishay and features a low on-resistance, enabling effective conduction with minimal power loss. This MOSFET is suitable for high-speed switching applications, including power supplies, motor drives, and electronic load circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 60A at specified conditions, and a low gate threshold voltage. The device is packaged in a TO-220 form factor, facilitating easy heat dissipation and integration into circuit designs.
The SI7326DN-T1-GE3 is characterized by its robust performance, high reliability, and compatibility with surface-mount technology, making it a preferred choice for engineers in designing energy-efficient systems.

Features

The SI7326DN-T1-GE3 is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. High Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 30V, suitable for various applications.
2. Low On-Resistance: With a low R_DS(on), typically around 12 mΩ at V_GS = 10V, it ensures efficient power management and reduced heat generation.
3. Fast Switching Speed: Capable of switching at high frequencies, enhancing performance in applications such as power supplies and motor controls.
4. Thermal Resistance: Features low thermal resistance, allowing effective heat dissipation and improved reliability.
5. Gate Threshold Voltage: V_GS(th) is typically between 1V to 3V, enabling operation in low-voltage applications.
6. Package Type: Available in a compact SOIC-8 package, facilitating easy integration into designs with space constraints.
Overall, the SI7326DN-T1-GE3 is suitable for applications requiring efficient and reliable power switching.

Package

The SI7326DN-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format, which features an 8-pin configuration. This package type is designed for surface mounting, providing a compact solution for various electronic applications.

Pinout

The SI7326DN-T1-GE3 is a dual N-channel MOSFET packaged in a 6-pin SOIC-8 configuration. It features two individual N-channel transistors, which are commonly used for power management applications, such as load switching and power routing in various electronic circuits.
The pinout for the SI7326DN-T1-GE3 is as follows:
1. G1 (Gate 1): Controls the first N-channel MOSFET.
2. D1 (Drain 1): The drain terminal of the first N-channel MOSFET.
3. S1 (Source 1): The source terminal of the first N-channel MOSFET.
4. G2 (Gate 2): Controls the second N-channel MOSFET.
5. D2 (Drain 2): The drain terminal of the second N-channel MOSFET.
6. S2 (Source 2): The source terminal of the second N-channel MOSFET.
The device operates with low on-resistance and fast switching speeds, making it suitable for various high-efficiency applications.

Manufacturer

The SI7326DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including resistors, capacitors, inductors, and various types of semiconductor devices, such as diodes, transistors, and integrated circuits. Vishay serves diverse industries, including automotive, industrial, computing, and telecommunications, providing components that are essential for electronic systems and applications. Established in 1962, Vishay is recognized for its innovation and quality in the electronics sector, making it a significant player in the global supply chain of electronic components.

Application

The SI7326DN-T1-GE3 is a dual N-channel MOSFET suitable for applications in power management, including DC-DC converters, load switching, and battery management systems. Its low on-resistance and high-speed switching capabilities make it ideal for use in portable devices, consumer electronics, and industrial equipment, enhancing efficiency and thermal performance in these applications.

Equivalent

The SI7326DN-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS123, IRLZ44N, and AO3400. When selecting a substitute, ensure compatibility in voltage, current ratings, R_DS(on), and package type to match your application requirements. Always verify with the manufacturer's datasheets for precise specifications.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

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UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

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EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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